Wolfspeed High Power RF LDMOS FET 700 W, 50 V, 1200 – 1400 MHz PTVA127002EV-V1

Description
The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband input and output matching High gain and efficiency Integrated ESD protection Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001) Low thermal resistance Excellent ruggedness Pb-free and RoHS compliant Capable of withstanding a 10:1 load mismatch (all phase angles) at 700 W peak under RF pulse, 300 μS, 10% duty cycle.
  • High Power RF LDMOS FET 700 W, 50 V, 1200 – 1400 MHz - PTVA127002EV-V1 - Wolfspeed
    Wolfspeed
Datasheet
Description
The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband input and output matching High gain and efficiency Integrated ESD protection Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001) Low thermal resistance Excellent ruggedness Pb-free and RoHS compliant Capable of withstanding a 10:1 load mismatch (all phase angles) at 700 W peak under RF pulse, 300 μS, 10% duty cycle.
Datasheet

Suppliers

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High Power RF LDMOS FET 700 W, 50 V, 1200 – 1400 MHz - PTVA127002EV-V1 - Wolfspeed
Wolfspeed
Durham, NC, United States
High Power RF LDMOS FET 700 W, 50 V, 1200 – 1400 MHz
PTVA127002EV-V1
High Power RF LDMOS FET 700 W, 50 V, 1200 – 1400 MHz PTVA127002EV-V1
The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Broadband input and output matching High gain and efficiency Integrated ESD protection Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001) Low thermal resistance Excellent ruggedness Pb-free and RoHS compliant Capable of withstanding a 10:1 load mismatch (all phase angles) at 700 W peak under RF pulse, 300 μS, 10% duty cycle.

The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Features

  • Broadband input and output matching
  • High gain and efficiency
  • Integrated ESD protection
  • Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Excellent ruggedness
  • Pb-free and RoHS compliant
  • Capable of withstanding a 10:1 load mismatch (all phase angles) at 700 W peak under RF pulse, 300 μS, 10% duty cycle.
Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number PTVA127002EV-V1
Product Name High Power RF LDMOS FET 700 W, 50 V, 1200 – 1400 MHz
Transistor Technology / Material High Power RF LDMOS FET 700 W, 50 V, 1200 – 1400 MHz
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