Wolfspeed High Power RF LDMOS FET 175 W, 28 V, 1805 – 1880 MHz PXFE181507FC-V1

Description
The PXFE181507FC is a 175-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability Features Broadband internal input and output matching Typical Pulsed CW performance, 1842 MHz, 28 V, single side, 16 μs, 10% duty cycle, class AB test Output power at P1dB = 175 W Output power at P3dB = 222 W Efficiency at P3dB = 60% Gain = 21.3 dB Capable of handling 10:1 VSWR @ 28 V, 180 W (CW) output power Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001) Integrated ESD protection Low thermal resistance Pb-free and RoHS compliant
  • High Power RF LDMOS FET 175 W, 28 V, 1805 – 1880 MHz - PXFE181507FC-V1 - Wolfspeed
    Wolfspeed
Datasheet
Description
The PXFE181507FC is a 175-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability Features Broadband internal input and output matching Typical Pulsed CW performance, 1842 MHz, 28 V, single side, 16 μs, 10% duty cycle, class AB test Output power at P1dB = 175 W Output power at P3dB = 222 W Efficiency at P3dB = 60% Gain = 21.3 dB Capable of handling 10:1 VSWR @ 28 V, 180 W (CW) output power Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001) Integrated ESD protection Low thermal resistance Pb-free and RoHS compliant
Datasheet

Suppliers

Company
Product
Description
Supplier Links
High Power RF LDMOS FET 175 W, 28 V, 1805 – 1880 MHz - PXFE181507FC-V1 - Wolfspeed
Wolfspeed
Durham, NC, United States
High Power RF LDMOS FET 175 W, 28 V, 1805 – 1880 MHz
PXFE181507FC-V1
High Power RF LDMOS FET 175 W, 28 V, 1805 – 1880 MHz PXFE181507FC-V1
The PXFE181507FC is a 175-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability Features Broadband internal input and output matching Typical Pulsed CW performance, 1842 MHz, 28 V, single side, 16 μs, 10% duty cycle, class AB test Output power at P1dB = 175 W Output power at P3dB = 222 W Efficiency at P3dB = 60% Gain = 21.3 dB Capable of handling 10:1 VSWR @ 28 V, 180 W (CW) output power Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001) Integrated ESD protection Low thermal resistance Pb-free and RoHS compliant

The PXFE181507FC is a 175-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability

Features

  • Broadband internal input and output matching
  • Typical Pulsed CW performance, 1842 MHz, 28 V, single side, 16 μs, 10% duty cycle, class AB test
    • Output power at P1dB = 175 W
    • Output power at P3dB = 222 W
    • Efficiency at P3dB = 60%
    • Gain = 21.3 dB
  • Capable of handling 10:1 VSWR @ 28 V, 180 W (CW) output power
  • Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant
Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number PXFE181507FC-V1
Product Name High Power RF LDMOS FET 175 W, 28 V, 1805 – 1880 MHz
Transistor Technology / Material High Power RF LDMOS FET 175 W, 28 V, 1805 – 1880 MHz
Unlock Full Specs
to access all available technical data