Wolfspeed High Power RF LDMOS FET 200 W, 50 V, 960 – 1600 MHz PTVA102001EA-V1

Description
The PTVA102001EA is a 200-watt LDMOS FET intended for use in power amplifier applications in the 960 to 1600 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Input matched Capable of handling 10:1 VSWR @50 V, 200 W (CW) output power Integrated ESD protection Low thermal resistance Pb-free and RoHS compliant
  • High Power RF LDMOS FET 200 W, 50 V, 960 – 1600 MHz - PTVA102001EA-V1 - Wolfspeed
    Wolfspeed
Datasheet
Description
The PTVA102001EA is a 200-watt LDMOS FET intended for use in power amplifier applications in the 960 to 1600 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Input matched Capable of handling 10:1 VSWR @50 V, 200 W (CW) output power Integrated ESD protection Low thermal resistance Pb-free and RoHS compliant
Datasheet

Suppliers

Company
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Description
Supplier Links
High Power RF LDMOS FET 200 W, 50 V, 960 – 1600 MHz - PTVA102001EA-V1 - Wolfspeed
Wolfspeed
Durham, NC, United States
High Power RF LDMOS FET 200 W, 50 V, 960 – 1600 MHz
PTVA102001EA-V1
High Power RF LDMOS FET 200 W, 50 V, 960 – 1600 MHz PTVA102001EA-V1
The PTVA102001EA is a 200-watt LDMOS FET intended for use in power amplifier applications in the 960 to 1600 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features Input matched Capable of handling 10:1 VSWR @50 V, 200 W (CW) output power Integrated ESD protection Low thermal resistance Pb-free and RoHS compliant

The PTVA102001EA is a 200-watt LDMOS FET intended for use in power amplifier applications in the 960 to 1600 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Features

  • Input matched
  • Capable of handling 10:1 VSWR @50 V, 200 W (CW) output power
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant
Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category RF Transistors
Product Number PTVA102001EA-V1
Product Name High Power RF LDMOS FET 200 W, 50 V, 960 – 1600 MHz
Transistor Technology / Material High Power RF LDMOS FET 200 W, 50 V, 960 – 1600 MHz
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