Wolfspeed Datasheets for Power Amplifiers
Power amplifiers deliver a specific amount of AC power to a load. They are used in audio frequency and radio frequency applications.
Power Amplifiers: Learn more
| Product Name | Notes |
|---|---|
| 130 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT for X-Band Radar Applications Cree’s CGHV96130F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide... | |
| 15 W, 2.7 to 3.5 GHz, 50 V, GaN MMIC Power Amplifier Wolfspeed’s CMPA2735015 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to... | |
| 2 W, 0.5 - 3.0 GHz, Input Matched No Output Match GaN MMIC for Pre-driver/Driver Amplifier Applications Cree’s CMPA0530002S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT)... | |
| 2-W; 20-MHz – 6000-MHz; GaN MMIC Power Amplifier Wolfspeed’s CMPA0060002 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared... | |
| 25-W, DC – 6.0-GHz, GaN MMIC Power Amplifier Wolfspeed’s CMPA0060025 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared... | |
| 3.1 - 3.5 GHz, 60 W, Packaged GaN MMIC Power Amplifier Cree’s CMPA3135060S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN... | |
| 30 W, 2.7 - 3.5 GHz, 50-V, GaN MMIC Power Amplifier Wolfspeed’s CMPA2735030 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon... | |
| 30 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Wolfspeed’s CMPA801B030 family of X-band MMIC amplifiers operate over the 7.9 – 11 GHz frequency range supporting satellite communications along... | |
| 38.5 dBm GaN on SiC Power Amplifier Module, 2496-2690 MHz The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC technology with advanced matching and... | |
| 39.5 dBm GaN on SiC Power Amplifier Module, 3300-3800 MHz The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with advanced matching... | |
| 39.5 dBm GaN on SiC Power Amplifier Module, 3700-3980 MHz The WS1A3940 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with advanced matching... | |
| 50-W; 5200 – 5900-MHz; 28 V; GaN MMIC for Radar Power Amplifiers Cree’s CMPA5259050 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency; high... | |
| 9.0 - 10.0 GHz, 20 W, Packaged GaN MMIC Power Amplifier Cree’s CMPA901A020S is a packaged, 20W HPA utilizing Cree’s high performance, 0.15um GaN on SiC production process. The CMPA901A020S... | |
| High power C-band MMIC for pulsed radar operation. The CMPA5259080S is a high power, two-stage MMIC housed in a QFN package. Operating at 40V and at 25°C case temperature the... | |
| High Power RF GaN on SiC HEMT 235 W, 48 V, 3700 – 4100 MHz The GTRA412852FC is a 235-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for... | |
| High Power RF GaN on SiC HEMT 400 W, 48 V, 2500 – 2700 MHz The GTRB264318FC is a 400-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for... | |
| High Power RF GaN on SiC HEMT 45 W, 48 V, 2515 – 2675 MHz The GTRA260502M is a 45-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for... | |
| High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz The GTRA360502M is a 50-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for... | |
| High Power RF GaN on SiC HEMT, 460 W, 48 V, 1805 – 1880 MHz The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for... | |
| High Power RF GaN on SiC HEMT, 490 W, 48 V, 2110 – 2170 MHz The GTRA214602FC is a 490-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed... | |
| High Power RF LDMOS FET, 520 W, 48 V, 925 - 960 MHz The PTRA095908NB is a 520-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications... | |
| High Power RF LDMOS FET, 615 W, 48 V, 730 – 960 MHz The PTRA084858NF is a 615-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in... | |
| High Power RF LDMOS FET, 800 W, 48 V, 730 – 960 MHz The PTRA097058NB is a 800-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in... | |
| The CMPA1C1D080F is a packaged, 90W HPA utilizing Wolfspeed’s high performance, 0.25um GaN on SiC production process. With a 12.75-13.25 GHz operating frequency range targeting satellite communications, the CMPA1C1D080F offers... | |
| The CMPA601C025F GaN HEMT MMIC amplifier offers 25 watts of power from 6 to 12 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a thermally enhanced, 10-lead... | |
| The CMPA901A035F1 is a fully matched MMIC housed in a thermally enhanced air cavity package. Operating at 28V, the device is capable of 40W of CW output power. The device... | |
| The PTGA090304MD is a wideband, two-stage, LDMOS integrated power amplifier. Fabricated with Wolfspeed's 50 V LDMOS process, it incorporates internal matching for operation from 575 MHz to 960 MHz, and... | |
| The PTMC210124MD is a wideband, two-stage, LDMOS integrated power amplifier. It incorporates internal matching for operation from 1805 MHz to 2200 MHz, and dual independent outputs with 6 W of... | |
| The PTMC210204MD is a wideband, two-stage LDMOS integrated amplifier intended for wideband driver applications. It has internal matching for operation from 1805 to 2200 MHz. It features on-chip matching high... | |
| The PTMC210204MD is a wideband, two-stage, LDMOS integrated power amplifier. It incorporates internal matching for operation from 1805 MHz to 2200 MHz, and dual independent outputs with 10 W of... | |
| The PTNC210604MD is a wideband, two-stage, LDMOS integrated power amplifier. It incorporates internal matching for operation from 1805 to 2200 MHz, and dual independent outputs with 20 W and 40... | |
| Wolfspeed’s CMP2560025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher... | |
| Wolfspeed’s CMP5585030D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift... | |
| Wolfspeed’s CMP801B025D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift... | |
| Wolfspeed’s CMPA0060002F is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown... | |
| Wolfspeed’s CMPA0060025D is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown... | |
| Wolfspeed’s CMPA0060025F is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift... | |
| Wolfspeed’s CMPA1C1D060D is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) based monolithic-microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.25-μm gate-length fabrication process. GaN-on-SiC has superior properties... | |
| Wolfspeed’s CMPA1D1E030D is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) based monolithic-microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.25-μm gate-length fabrication process. GaN-on-SiC has superior properties... | |
| Wolfspeed’s CMPA2560025F is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift... | |
| Wolfspeed’s CMPA2735075D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide, including higher breakdown voltage, higher saturated electron drift velocity... | |
| Wolfspeed’s CMPA2735075F is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift... | |
| Wolfspeed’s CMPA5585030F is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown... | |
| Wolfspeed’s CMPA601C025D is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT)-based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.25-μm gate-length fabrication process. GaN-on-SiC has superior properties... | |
| Wolfspeed’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher... | |
| Wolfspeed’s CMPA1D1E025F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT)-based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.25-μm gate length fabrication process. GaN-on-SiC has superior... | |
| Wolfspeed’s CMPA1H1J050F is a 60 W, MMIC HPA utilizing Wolfspeed’s high performance, 0.15um GaN on SiC production process. The CMPA1H1J050F operates from 17.3 – 19.2 GHz and targets both satellite... | |
| Wolfspeed’s CMPA5259025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency; high gain; and wide bandwidth capabilities; which makes CMPA5259025F ideal for 5.2 – | |
| Wolfspeed's CMPA9396025S is a GaN MMIC designed specifically from 9.3-9.6GHz to be compact and provide high-efficiency, which makes it ideal for marine radar amplifier applications. The MMIC delivers 25W at... |