Wolfspeed High Power GaN on SiC HEMT GTRA184602FC-V1

Description
High Power RF GaN on SiC HEMT, 460 W, 48 V, 1805 – 1880 MHz The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermallyenhanced package with earless flange.
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Description
High Power RF GaN on SiC HEMT, 460 W, 48 V, 1805 – 1880 MHz The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermallyenhanced package with earless flange.
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High Power GaN on SiC HEMT - GTRA184602FC-V1 - Wolfspeed
Wolfspeed
Durham, NC, United States
High Power GaN on SiC HEMT
GTRA184602FC-V1
High Power GaN on SiC HEMT GTRA184602FC-V1
High Power RF GaN on SiC HEMT, 460 W, 48 V, 1805 – 1880 MHz The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermallyenhanced package with earless flange.

High Power RF GaN on SiC HEMT, 460 W, 48 V, 1805 – 1880 MHz

The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermallyenhanced package with earless flange.

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Technical Specifications

  Wolfspeed
Product Category Power Amplifiers
Product Number GTRA184602FC-V1
Product Name High Power GaN on SiC HEMT
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