Wolfspeed GaN on SiC Power Amplifier Module WS1A3940-V1

Description
39.5 dBm GaN on SiC Power Amplifier Module, 3700-3980 MHz The WS1A3940 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 3700 MHz to 3980 MHz, from supply voltages up to 50 V, at average output power levels of 8 to 10 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of 200 MHz or more. The device is housed in a 6 mm X 6 mm land grid array (LGA) package.
  • GaN on SiC Power Amplifier Module - WS1A3940-V1 - Wolfspeed
    Wolfspeed
Description
39.5 dBm GaN on SiC Power Amplifier Module, 3700-3980 MHz The WS1A3940 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 3700 MHz to 3980 MHz, from supply voltages up to 50 V, at average output power levels of 8 to 10 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of 200 MHz or more. The device is housed in a 6 mm X 6 mm land grid array (LGA) package.

Suppliers

Company
Product
Description
Supplier Links
GaN on SiC Power Amplifier Module - WS1A3940-V1 - Wolfspeed
Wolfspeed
Durham, NC, United States
GaN on SiC Power Amplifier Module
WS1A3940-V1
GaN on SiC Power Amplifier Module WS1A3940-V1
39.5 dBm GaN on SiC Power Amplifier Module, 3700-3980 MHz The WS1A3940 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 3700 MHz to 3980 MHz, from supply voltages up to 50 V, at average output power levels of 8 to 10 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of 200 MHz or more. The device is housed in a 6 mm X 6 mm land grid array (LGA) package.

39.5 dBm GaN on SiC Power Amplifier Module, 3700-3980 MHz

The WS1A3940 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 3700 MHz to 3980 MHz, from supply voltages up to 50 V, at average output power levels of 8 to 10 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of 200 MHz or more. The device is housed in a 6 mm X 6 mm land grid array (LGA) package.

Supplier's Site

Technical Specifications

  Wolfspeed
Product Category Power Amplifiers
Product Number WS1A3940-V1
Product Name GaN on SiC Power Amplifier Module
Unlock Full Specs
to access all available technical data

Similar Products