Wolfspeed 25-W, 20-MHz – 6.0-GHz, GaN MMIC Power Amplifier CMPA0060025D

Description
Wolfspeed’s CMPA0060025D is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables very wide bandwidths.
Datasheet
Description
Wolfspeed’s CMPA0060025D is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables very wide bandwidths.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
25-W, 20-MHz – 6.0-GHz, GaN MMIC Power Amplifier - CMPA0060025D - Wolfspeed
Durham, NC, United States
25-W, 20-MHz – 6.0-GHz, GaN MMIC Power Amplifier
CMPA0060025D
25-W, 20-MHz – 6.0-GHz, GaN MMIC Power Amplifier CMPA0060025D
Wolfspeed’s CMPA0060025D is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables very wide bandwidths.

Wolfspeed’s CMPA0060025D is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables very wide bandwidths.

Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category Power Amplifiers
Product Number CMPA0060025D
Product Name 25-W, 20-MHz – 6.0-GHz, GaN MMIC Power Amplifier
Unlock Full Specs
to access all available technical data

Similar Products