Wolfspeed GaN on SiC Power Amplifier Module WS1A2639-V1

Description
38.5 dBm GaN on SiC Power Amplifier Module, 2496-2690 MHz The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC technology with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 2496 MHz to 2690 MHz. It uses a supply voltages of up to 50 V at maximum, average output power levels of 6 to 8 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of up to 200 MHz. The device is housed in a 6 mm X 6 mm land grid array (LGA) package.
  • GaN on SiC Power Amplifier Module - WS1A2639-V1 - Wolfspeed
    Wolfspeed
Description
38.5 dBm GaN on SiC Power Amplifier Module, 2496-2690 MHz The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC technology with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 2496 MHz to 2690 MHz. It uses a supply voltages of up to 50 V at maximum, average output power levels of 6 to 8 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of up to 200 MHz. The device is housed in a 6 mm X 6 mm land grid array (LGA) package.

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GaN on SiC Power Amplifier Module - WS1A2639-V1 - Wolfspeed
Wolfspeed
Durham, NC, United States
GaN on SiC Power Amplifier Module
WS1A2639-V1
GaN on SiC Power Amplifier Module WS1A2639-V1
38.5 dBm GaN on SiC Power Amplifier Module, 2496-2690 MHz The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC technology with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 2496 MHz to 2690 MHz. It uses a supply voltages of up to 50 V at maximum, average output power levels of 6 to 8 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of up to 200 MHz. The device is housed in a 6 mm X 6 mm land grid array (LGA) package.

38.5 dBm GaN on SiC Power Amplifier Module, 2496-2690 MHz

The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC technology with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 2496 MHz to 2690 MHz. It uses a supply voltages of up to 50 V at maximum, average output power levels of 6 to 8 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of up to 200 MHz. The device is housed in a 6 mm X 6 mm land grid array (LGA) package.

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Technical Specifications

  Wolfspeed
Product Category Power Amplifiers
Product Number WS1A2639-V1
Product Name GaN on SiC Power Amplifier Module
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