Wolfspeed GaN MMIC Power Amplifier CMPA0060025F1

Description
25-W, DC – 6.0-GHz, GaN MMIC Power Amplifier Wolfspeed’s CMPA0060025 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables very wide bandwidths to be achieved in a small-footprint.
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Description
25-W, DC – 6.0-GHz, GaN MMIC Power Amplifier Wolfspeed’s CMPA0060025 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables very wide bandwidths to be achieved in a small-footprint.
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GaN MMIC Power Amplifier - CMPA0060025F1 - Wolfspeed
Durham, NC, United States
GaN MMIC Power Amplifier
CMPA0060025F1
GaN MMIC Power Amplifier CMPA0060025F1
25-W, DC – 6.0-GHz, GaN MMIC Power Amplifier Wolfspeed’s CMPA0060025 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables very wide bandwidths to be achieved in a small-footprint.

25-W, DC – 6.0-GHz, GaN MMIC Power Amplifier

Wolfspeed’s CMPA0060025 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables very wide bandwidths to be achieved in a small-footprint.

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Technical Specifications

  Wolfspeed
Product Category Power Amplifiers
Product Number CMPA0060025F1
Product Name GaN MMIC Power Amplifier
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