Wolfspeed GaN MMIC Power Amplifier CMPA2735030S

Description
30 W, 2.7 - 3.5 GHz, 50-V, GaN MMIC Power Amplifier Wolfspeed’s CMPA2735030 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.
Datasheet
Description
30 W, 2.7 - 3.5 GHz, 50-V, GaN MMIC Power Amplifier Wolfspeed’s CMPA2735030 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.
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GaN MMIC Power Amplifier - CMPA2735030S - Wolfspeed
Durham, NC, United States
GaN MMIC Power Amplifier
CMPA2735030S
GaN MMIC Power Amplifier CMPA2735030S
30 W, 2.7 - 3.5 GHz, 50-V, GaN MMIC Power Amplifier Wolfspeed’s CMPA2735030 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

30 W, 2.7 - 3.5 GHz, 50-V, GaN MMIC Power Amplifier

Wolfspeed’s CMPA2735030 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

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Technical Specifications

  Wolfspeed
Product Category Power Amplifiers
Product Number CMPA2735030S
Product Name GaN MMIC Power Amplifier
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