Wolfspeed High Power GaN on SiC HEMT GTRA260502M-V1

Description
High Power RF GaN on SiC HEMT 45 W, 48 V, 2515 – 2675 MHz The GTRA260502M is a 45-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally enhanced, overmold package.
  • High Power GaN on SiC HEMT - GTRA260502M-V1 - Wolfspeed
    Wolfspeed
Datasheet
Description
High Power RF GaN on SiC HEMT 45 W, 48 V, 2515 – 2675 MHz The GTRA260502M is a 45-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally enhanced, overmold package.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
High Power GaN on SiC HEMT - GTRA260502M-V1 - Wolfspeed
Wolfspeed
Durham, NC, United States
High Power GaN on SiC HEMT
GTRA260502M-V1
High Power GaN on SiC HEMT GTRA260502M-V1
High Power RF GaN on SiC HEMT 45 W, 48 V, 2515 – 2675 MHz The GTRA260502M is a 45-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally enhanced, overmold package.

High Power RF GaN on SiC HEMT 45 W, 48 V, 2515 – 2675 MHz

The GTRA260502M is a 45-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally enhanced, overmold package.

Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category Power Amplifiers
Product Number GTRA260502M-V1
Product Name High Power GaN on SiC HEMT
Unlock Full Specs
to access all available technical data

Similar Products