Wolfspeed 30-W, 5.5 – 8.5-GHz, GaN MMIC Power Amplifier CMPA5585030D

Description
Wolfspeed’s CMP5585030D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage, reactively matched amplifier design approach enabling very wide bandwidths to be achieved.
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Description
Wolfspeed’s CMP5585030D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage, reactively matched amplifier design approach enabling very wide bandwidths to be achieved.
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30-W, 5.5 – 8.5-GHz, GaN MMIC Power Amplifier - CMPA5585030D - Wolfspeed
Durham, NC, United States
30-W, 5.5 – 8.5-GHz, GaN MMIC Power Amplifier
CMPA5585030D
30-W, 5.5 – 8.5-GHz, GaN MMIC Power Amplifier CMPA5585030D
Wolfspeed’s CMP5585030D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage, reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

Wolfspeed’s CMP5585030D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage, reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

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Technical Specifications

  Wolfspeed
Product Category Power Amplifiers
Product Number CMPA5585030D
Product Name 30-W, 5.5 – 8.5-GHz, GaN MMIC Power Amplifier
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