Wolfspeed High Power GaN on SiC HEMT GTRA214602FC-V1

Description
High Power RF GaN on SiC HEMT, 490 W, 48 V, 2110 – 2170 MHz The GTRA214602FC is a 490-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
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Description
High Power RF GaN on SiC HEMT, 490 W, 48 V, 2110 – 2170 MHz The GTRA214602FC is a 490-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
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High Power GaN on SiC HEMT - GTRA214602FC-V1 - Wolfspeed
Wolfspeed
Durham, NC, United States
High Power GaN on SiC HEMT
GTRA214602FC-V1
High Power GaN on SiC HEMT GTRA214602FC-V1
High Power RF GaN on SiC HEMT, 490 W, 48 V, 2110 – 2170 MHz The GTRA214602FC is a 490-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.

High Power RF GaN on SiC HEMT, 490 W, 48 V, 2110 – 2170 MHz

The GTRA214602FC is a 490-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.

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Technical Specifications

  Wolfspeed
Product Category Power Amplifiers
Product Number GTRA214602FC-V1
Product Name High Power GaN on SiC HEMT
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