Wolfspeed High Power GaN on SiC HEMT GTRB264318FC-V1

Description
High Power RF GaN on SiC HEMT 400 W, 48 V, 2500 – 2700 MHz The GTRB264318FC is a 400-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features internal matching, high efficiency, and a thermally-enhanced package with earless flange.
  • High Power GaN on SiC HEMT - GTRB264318FC-V1 - Wolfspeed
    Wolfspeed
Description
High Power RF GaN on SiC HEMT 400 W, 48 V, 2500 – 2700 MHz The GTRB264318FC is a 400-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features internal matching, high efficiency, and a thermally-enhanced package with earless flange.

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High Power GaN on SiC HEMT - GTRB264318FC-V1 - Wolfspeed
Wolfspeed
Durham, NC, United States
High Power GaN on SiC HEMT
GTRB264318FC-V1
High Power GaN on SiC HEMT GTRB264318FC-V1
High Power RF GaN on SiC HEMT 400 W, 48 V, 2500 – 2700 MHz The GTRB264318FC is a 400-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features internal matching, high efficiency, and a thermally-enhanced package with earless flange.

High Power RF GaN on SiC HEMT 400 W, 48 V, 2500 – 2700 MHz

The GTRB264318FC is a 400-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features internal matching, high efficiency, and a thermally-enhanced package with earless flange.

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Technical Specifications

  Wolfspeed
Product Category Power Amplifiers
Product Number GTRB264318FC-V1
Product Name High Power GaN on SiC HEMT
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