Wolfspeed High Power GaN on SiC HEMT GTRA412852FC-V1

Description
High Power RF GaN on SiC HEMT 235 W, 48 V, 3700 – 4100 MHz The GTRA412852FC is a 235-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching, high efficiency, and a thermally-enhanced package with earless flange.
  • High Power GaN on SiC HEMT - GTRA412852FC-V1 - Wolfspeed
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Description
High Power RF GaN on SiC HEMT 235 W, 48 V, 3700 – 4100 MHz The GTRA412852FC is a 235-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching, high efficiency, and a thermally-enhanced package with earless flange.

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High Power GaN on SiC HEMT - GTRA412852FC-V1 - Wolfspeed
Wolfspeed
Durham, NC, United States
High Power GaN on SiC HEMT
GTRA412852FC-V1
High Power GaN on SiC HEMT GTRA412852FC-V1
High Power RF GaN on SiC HEMT 235 W, 48 V, 3700 – 4100 MHz The GTRA412852FC is a 235-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching, high efficiency, and a thermally-enhanced package with earless flange.

High Power RF GaN on SiC HEMT 235 W, 48 V, 3700 – 4100 MHz

The GTRA412852FC is a 235-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching, high efficiency, and a thermally-enhanced package with earless flange.

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Technical Specifications

  Wolfspeed
Product Category Power Amplifiers
Product Number GTRA412852FC-V1
Product Name High Power GaN on SiC HEMT
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