Wolfspeed’s CMPA1D1E025F is a gallium-nitride (GaN) high-electron-mobili
ty transistor (HEMT)-based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.25-μm gate length fabrication process. GaN-on-SiC has superior properties compared to silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage, higher saturated-electron-d
rift velocity and higher thermal conductivity. This Ku Band MMIC is available in a 10-lead, 25-mm x 9.9-mm, metal/ceramic flanged package for optimal electrical and thermal performance.
PAVE = 42 dBm, IM3 = -30 dBc, -33 dBc OQPSK offset
Class A/B high-gain, high-efficiency, 50-ohm MMIC Ku Band high-power amplifier
Wolfspeed’s CMPA1D1E025F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT)-based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.25-μm gate length fabrication process. GaN-on-SiC has superior properties compared to silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage, higher saturated-electron-drift velocity and higher thermal conductivity. This Ku Band MMIC is available in a 10-lead, 25-mm x 9.9-mm, metal/ceramic flanged package for optimal electrical and thermal performance.
- PAVE = 42 dBm, IM3 = -30 dBc, -33 dBc OQPSK offset
- Class A/B high-gain, high-efficiency, 50-ohm MMIC Ku Band high-power amplifier
