Wolfspeed 75-W, 2.7 – 3.5-GHz, GaN MMIC Power Amplifier CMPA2735075F

Description
Wolfspeed’s CMPA2735075F is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. This MMIC enables extremely wide bandwidths to be achieved in a small-footprint, screw-down package.
Datasheet
Description
Wolfspeed’s CMPA2735075F is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. This MMIC enables extremely wide bandwidths to be achieved in a small-footprint, screw-down package.
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75-W, 2.7 – 3.5-GHz, GaN MMIC Power Amplifier - CMPA2735075F - Wolfspeed
Durham, NC, United States
75-W, 2.7 – 3.5-GHz, GaN MMIC Power Amplifier
CMPA2735075F
75-W, 2.7 – 3.5-GHz, GaN MMIC Power Amplifier CMPA2735075F
Wolfspeed’s CMPA2735075F is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. This MMIC enables extremely wide bandwidths to be achieved in a small-footprint, screw-down package.

Wolfspeed’s CMPA2735075F is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. This MMIC enables extremely wide bandwidths to be achieved in a small-footprint, screw-down package.

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Technical Specifications

  Wolfspeed
Product Category Power Amplifiers
Product Number CMPA2735075F
Product Name 75-W, 2.7 – 3.5-GHz, GaN MMIC Power Amplifier
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