Wolfspeed 25-W, 2500 – 6000-MHz, GaN MMIC Power Amplifier CMPA2560025F

Description
Wolfspeed’s CMPA2560025F is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier, enabling very wide bandwidths to be achieved in a small-footprint, screw-down package featuring a copper-tungsten heat sink.
Datasheet
Description
Wolfspeed’s CMPA2560025F is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier, enabling very wide bandwidths to be achieved in a small-footprint, screw-down package featuring a copper-tungsten heat sink.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
25-W, 2500 – 6000-MHz, GaN MMIC Power Amplifier - CMPA2560025F - Wolfspeed
Durham, NC, United States
25-W, 2500 – 6000-MHz, GaN MMIC Power Amplifier
CMPA2560025F
25-W, 2500 – 6000-MHz, GaN MMIC Power Amplifier CMPA2560025F
Wolfspeed’s CMPA2560025F is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier, enabling very wide bandwidths to be achieved in a small-footprint, screw-down package featuring a copper-tungsten heat sink.

Wolfspeed’s CMPA2560025F is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier, enabling very wide bandwidths to be achieved in a small-footprint, screw-down package featuring a copper-tungsten heat sink.

Supplier's Site Datasheet

Technical Specifications

  Wolfspeed
Product Category Power Amplifiers
Product Number CMPA2560025F
Product Name 25-W, 2500 – 6000-MHz, GaN MMIC Power Amplifier
Unlock Full Specs
to access all available technical data

Similar Products