Wolfspeed 75-W, 2.7 – 3.5-GHz, GaN MMIC Power Amplifier CMPA2735075D

Description
Wolfspeed’s CMPA2735075D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.
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Description
Wolfspeed’s CMPA2735075D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.
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75-W, 2.7 – 3.5-GHz, GaN MMIC Power Amplifier - CMPA2735075D - Wolfspeed
Durham, NC, United States
75-W, 2.7 – 3.5-GHz, GaN MMIC Power Amplifier
CMPA2735075D
75-W, 2.7 – 3.5-GHz, GaN MMIC Power Amplifier CMPA2735075D
Wolfspeed’s CMPA2735075D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

Wolfspeed’s CMPA2735075D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

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Technical Specifications

  Wolfspeed
Product Category Power Amplifiers
Product Number CMPA2735075D
Product Name 75-W, 2.7 – 3.5-GHz, GaN MMIC Power Amplifier
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