Wolfspeed 25-W, 2.5 – 6.0-GHz, GaN MMIC Power Amplifier CMPA2560025D

Description
Wolfspeed’s CMP2560025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.
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Description
Wolfspeed’s CMP2560025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.
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25-W, 2.5 – 6.0-GHz, GaN MMIC Power Amplifier - CMPA2560025D - Wolfspeed
Durham, NC, United States
25-W, 2.5 – 6.0-GHz, GaN MMIC Power Amplifier
CMPA2560025D
25-W, 2.5 – 6.0-GHz, GaN MMIC Power Amplifier CMPA2560025D
Wolfspeed’s CMP2560025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

Wolfspeed’s CMP2560025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

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Technical Specifications

  Wolfspeed
Product Category Power Amplifiers
Product Number CMPA2560025D
Product Name 25-W, 2.5 – 6.0-GHz, GaN MMIC Power Amplifier
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