Wolfspeed 25-W, 8.0 – 11.0-GHz, GaN MMIC Power Amplifier CMPA801B025

Description
Wolfspeed’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10-lead metal/ceramic flanged package (CMPA801B025F) or small form-factor pill package (CMPA801B025P) for optimal electrical and thermal performance.
Datasheet
Description
Wolfspeed’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10-lead metal/ceramic flanged package (CMPA801B025F) or small form-factor pill package (CMPA801B025P) for optimal electrical and thermal performance.
Datasheet

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25-W, 8.0 – 11.0-GHz, GaN MMIC Power Amplifier - CMPA801B025 - Wolfspeed
Durham, NC, United States
25-W, 8.0 – 11.0-GHz, GaN MMIC Power Amplifier
CMPA801B025
25-W, 8.0 – 11.0-GHz, GaN MMIC Power Amplifier CMPA801B025
Wolfspeed’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10-lead metal/ceramic flanged package (CMPA801B025F) or small form-factor pill package (CMPA801B025P) for optimal electrical and thermal performance.

Wolfspeed’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10-lead metal/ceramic flanged package (CMPA801B025F) or small form-factor pill package (CMPA801B025P) for optimal electrical and thermal performance.

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Technical Specifications

  Wolfspeed
Product Category Power Amplifiers
Product Number CMPA801B025
Product Name 25-W, 8.0 – 11.0-GHz, GaN MMIC Power Amplifier
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