Wolfspeed 30-W, 5.5 – 8.5-GHz, GaN MMIC Power Amplifier CMPA5585030F

Description
Wolfspeed’s CMPA5585030F is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10 lead metal/ceramic flanged package for optimal electrical and thermal performance.
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Description
Wolfspeed’s CMPA5585030F is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10 lead metal/ceramic flanged package for optimal electrical and thermal performance.
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30-W, 5.5 – 8.5-GHz, GaN MMIC Power Amplifier - CMPA5585030F - Wolfspeed
Durham, NC, United States
30-W, 5.5 – 8.5-GHz, GaN MMIC Power Amplifier
CMPA5585030F
30-W, 5.5 – 8.5-GHz, GaN MMIC Power Amplifier CMPA5585030F
Wolfspeed’s CMPA5585030F is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10 lead metal/ceramic flanged package for optimal electrical and thermal performance.

Wolfspeed’s CMPA5585030F is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10 lead metal/ceramic flanged package for optimal electrical and thermal performance.

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Technical Specifications

  Wolfspeed
Product Category Power Amplifiers
Product Number CMPA5585030F
Product Name 30-W, 5.5 – 8.5-GHz, GaN MMIC Power Amplifier
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