Wolfspeed Datasheets for Junction Field-Effect Transistors (JFET)

Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region.
Junction Field-Effect Transistors (JFET): Learn more

Product Name	Notes
CG2H80015D-GP4 CG2H80030D-GP4 CG2H80060D-GP4 CGH27015F CGH27030F CGH27060F CGH35240F CGH40010F CGH40025F CGH40035F CGH40045F CGH55015F1 CGH55030F1 CGH55030F2 CGH60008D-GP4 CGHV14800F CGHV1J006D-GP4 CGHV1J070D-GP4 CGHV35150F CGHV40030F CGHV40050F CGHV40100F CGHV59070F CGHV59350F GTVA104001FA-V1-R0 GTVA107001EC-V1-R0 GTVA123501FA-V1-R0 GTVA126001EC-V1-R0
30 W, DC - 6.0 GHz, GaN HEMT -- CGHV27030S	The CGHV27030S is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for...
6-W RF Power GaN HEMT -- CGH40006P	Wolfspeed’s CGH40006P is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGH40006P, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave...
6-W RF Power GaN HEMT, Plastic -- CGH40006S	Wolfspeed’s CGH40006S is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGH40006S, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave...
120-W, UHF – 2.5-GHz, GaN HEMT for WCDMA, LTE, MC-GSM -- CGH09120F	Wolfspeed’s CGH09120F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE amplifier applications.
30-W, DC – 6.0-GHz, 28-V, GaN HEMT -- CGH27030S	Wolfspeed’s CGH27030S is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE,...
90-W RF Power GaN HEMT -- CGH40090PP	Wolfspeed’s CGH40090PP is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of...
120-W RF Power GaN HEMT -- CGH40120F	Wolfspeed’s CGH40120F is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGH40120F, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave...
180-W RF Power GaN HEMT -- CGH40180PP	Wolfspeed’s CGH40180PP is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGH40180PP, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave...
6-W, DC – 18-GHz, 40-V, GaN HEMT -- CGHV1F006S	Wolfspeed’s CGHV1F006S is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities. The device can be deployed for L, S, C, X and...
25-W, DC – 15-GHz, 40-V, GaN HEMT -- CGHV1F025S	Wolfspeed’s CGHV1F025S is an unmatched, gallium-nitride (GaN), high-electron-mobili ty transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities. The device can be deployed for L, S, C, X and...
15 W, DC - 6.0 GHz, 50 V, GaN HEMT -- CGHV27015S	Wolfspeed’s CGHV27015S is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE,...
200-W RF Power GaN HEMT -- CGHV40200PP	Wolfspeed’s CGHV40200PP is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGHV40200PP, operating from a 50-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave...
40-W, 6.0-GHz, GaN HEMT Die -- CGHV60040D	Wolfspeed’s CGHV60040D is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated-electron-d rift velocity, and higher...
75-W, 6.0-GHz, GaN HEMT Die -- CGHV60075D5	Wolfspeed’s CGHV60075D5 is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated-electron-d rift velocity, and higher...
50-W, 7.9 – 9.6-GHz, 50-ohm, Input/Output-Matched GaN HEMT -- CGHV96050F2	Wolfspeed’s CGHV96050F2 is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies.
100-W, 7.9 – 9.6-GHz, 50-ohm, Input/Output-Matched, GaN HEMT Power Amplifier -- CGHV96100F2	Wolfspeed’s CGHV96100F2 is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies.

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