The GTVA123501FA is a 350-watt GaN on SiC HEMT for RF amplification in the DC to 1.4 GHz range, housed in a thermally-enhanced H-37265J-2 surface-mount package with an earless flange. It operates at a drain voltage of 50 V with a quiescent gate current of 100 mA, delivering a minimum output power of 350 W at 1300 MHz with a gain of 18 dB and drain efficiency up to 74%. The device supports a 10:1 VSWR under full power conditions and is rated for a junction temperature of 225 °C with a thermal resistance of 0.17 °C/W. It is RoHS compliant and meets ESD Class 1B per ANSI/ESDA/JEDEC JS-001.
RF JFET Transistors GaN HEMT 50V 1.2-1.4GHz 350W
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Transistors |
| Product Number | GTVA123501FA-V1-R0 |
| Product Name | RF JFET Transistors |
| Transistor Type | JFET |
