Junction Field-Effect Transistors (JFET) Datasheets

Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region.
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Junction Field-Effect Transistors (JFET) Datasheets From:
Headquarters
ODG (Origin Data Global)
China
Rochester Electronics
United States
RS Components, Ltd.
United Kingdom
Win Source Electronics
United States
Infineon Technologies AG
Germany
LIXINC Electronics Co., Limited
China
Qorvo
United States
Skyworks Solutions, Inc.
United States
Texas Instruments
United States
Acme Chip Technology Co., Limited
China
Karl Kruse GmbH & Co. KG
Germany
LCSC Electronics Technology (HK) Limited
China
Linear Systems
United States
New Jersey Semi-Conductor Products, Inc.
Springfield, NJ
Shenzhen Shengyu Electronics Technology Limited
China
Utmel Electronic Limited
China
Broadcom Inc.
San Jose, CA
California Eastern Laboratories - CEL
Santa Clara, CA
Calogic, LLC
United States
Central Semiconductor Corp.
United States
GeneSiC Semiconductor, Inc.
United States
InterFET Corporation
United States
MACOM
Lowell, MA
Microchip Technology, Inc.
United States
Microsemi Corp.
United States
NEC Corporation
United States
Newark, An Avnet Company
United States
NTE Electronics, Inc.
United States
NXP Semiconductors
United States
onsemi
United States
Panasonic
Newark, NJ
Renesas Electronics Corporation
Milpitas, CA
ROHM Co., Ltd.
Japan
Royal Philips Electronics
United States
Sanyo Machine America
United States
Solid State, Inc.
United States
Toshiba Corporation
Japan
Toshiba Imaging Systems Division
Irvine, CA
Toshiba Semiconductor & Storage Products
United States
Unisonic Technologies Co., Ltd.
China
Vishay Intertechnology, Inc.
United States
Wolfspeed
United States