Wolfspeed 75-W, 6.0-GHz, GaN HEMT Die CGHV60075D5

Description
Wolfspeed’s CGHV60075D5 is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated-electron-d rift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors. Features Up to 6-GHz operation
Datasheet
Description
Wolfspeed’s CGHV60075D5 is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated-electron-d rift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors. Features Up to 6-GHz operation
Datasheet

Suppliers

Company
Product
Description
Supplier Links
75-W, 6.0-GHz, GaN HEMT Die - CGHV60075D5 - Wolfspeed
Durham, NC, United States
75-W, 6.0-GHz, GaN HEMT Die
CGHV60075D5
75-W, 6.0-GHz, GaN HEMT Die CGHV60075D5
Wolfspeed’s CGHV60075D5 is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated-electron-d rift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors. Features Up to 6-GHz operation

Wolfspeed’s CGHV60075D5 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated-electron-drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

Features

  • Up to 6-GHz operation
Supplier's Site Datasheet
Sheung Wan, Hong Kong
RF JFET Transistors
CGHV60075D5
RF JFET Transistors CGHV60075D5
RF JFET Transistors GaN HEMT Die DC-6.0GHz, 75 Watt

RF JFET Transistors GaN HEMT Die DC-6.0GHz, 75 Watt

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Technical Specifications

  Wolfspeed VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors
Product Number CGHV60075D5 CGHV60075D5
Product Name 75-W, 6.0-GHz, GaN HEMT Die RF JFET Transistors
Transistor Technology / Material GaN
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