The CGH80030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) die designed for RF amplification up to 8 GHz with a typical saturated output power of 30 W at 28 V operation. It is shipped as a bare die measuring 1660 x 920 microns with a thickness of 100 microns, mounted on a Cu15Mo85 carrier with eutectic AuSn solder. The die offers a typical drain efficiency of 65%, small signal gain of 16.5 dB at 4 GHz, and supports a maximum junction temperature of 225 °C. The backside serves as the source connection and requires gold wire bonding. No packaging or external qualification standards are specified beyond its die-level attributes.
RF JFET Transistors GaN HEMT Die DC-8.0GHz, 30 Watt
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Transistors |
| Product Number | CG2H80030D-GP4 |
| Product Name | RF JFET Transistors |
| Transistor Type | JFET |
