Wolfspeed 30 W, DC - 6.0 GHz, GaN HEMT CGHV27030S

Description
The CGHV27030S is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications applications with frequencies of 700-960 MHz, 1200-1400 MHz, 1800-2200 MHz, 2500-2700 MHz, and 3300-3700 MHz at both 50 V and 28 V operations. The CGHV27030S is also ideal for tactical communications applications operating from 20-2500 MHz, including land mobile radios. Additional applications include L-Band RADAR and S-Band RADAR. The CGHV27030S can operate with either a 50 V or 28 V rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Features for 50 V in CGHV27030S-TB1 2.5 - 2.7 GHz Operation High degree of APD and DPD correction can be applied
Datasheet
Description
The CGHV27030S is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications applications with frequencies of 700-960 MHz, 1200-1400 MHz, 1800-2200 MHz, 2500-2700 MHz, and 3300-3700 MHz at both 50 V and 28 V operations. The CGHV27030S is also ideal for tactical communications applications operating from 20-2500 MHz, including land mobile radios. Additional applications include L-Band RADAR and S-Band RADAR. The CGHV27030S can operate with either a 50 V or 28 V rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Features for 50 V in CGHV27030S-TB1 2.5 - 2.7 GHz Operation High degree of APD and DPD correction can be applied
Datasheet

Suppliers

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Supplier Links
30 W, DC - 6.0 GHz, GaN HEMT - CGHV27030S - Wolfspeed
Durham, NC, United States
30 W, DC - 6.0 GHz, GaN HEMT
CGHV27030S
30 W, DC - 6.0 GHz, GaN HEMT CGHV27030S
The CGHV27030S is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications applications with frequencies of 700-960 MHz, 1200-1400 MHz, 1800-2200 MHz, 2500-2700 MHz, and 3300-3700 MHz at both 50 V and 28 V operations. The CGHV27030S is also ideal for tactical communications applications operating from 20-2500 MHz, including land mobile radios. Additional applications include L-Band RADAR and S-Band RADAR. The CGHV27030S can operate with either a 50 V or 28 V rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Features for 50 V in CGHV27030S-TB1 2.5 - 2.7 GHz Operation High degree of APD and DPD correction can be applied

The CGHV27030S is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications applications with frequencies of 700-960 MHz, 1200-1400 MHz, 1800-2200 MHz, 2500-2700 MHz, and 3300-3700 MHz at both 50 V and 28 V operations. The CGHV27030S is also ideal for tactical communications applications operating from 20-2500 MHz, including land mobile radios. Additional applications include L-Band RADAR and S-Band RADAR. The CGHV27030S can operate with either a 50 V or 28 V rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package.

Features for 50 V in CGHV27030S-TB1

  • 2.5 - 2.7 GHz Operation
  • High degree of APD and DPD correction can be applied
Supplier's Site Datasheet
Sheung Wan, Hong Kong
RF JFET Transistors
CGHV27030S
RF JFET Transistors CGHV27030S
RF JFET Transistors GaN HEMT DC-6.0GHz, 30 Watt

RF JFET Transistors GaN HEMT DC-6.0GHz, 30 Watt

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Technical Specifications

  Wolfspeed VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors
Product Number CGHV27030S CGHV27030S
Product Name 30 W, DC - 6.0 GHz, GaN HEMT RF JFET Transistors
Transistor Technology / Material GaN
Package Type Surface Mount
Power Gain 21 dB
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