Wolfspeed 100-W, 7.9 – 9.6-GHz, 50-ohm, Input/Output-Matched, GaN HEMT Power Amplifier CGHV96100F2

Description
Wolfspeed’s CGHV96100F2 is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance. Features 145 W POUT typical
  • 100-W, 7.9 – 9.6-GHz, 50-ohm, Input/Output-Matched, GaN HEMT Power Amplifier - CGHV96100F2 - Wolfspeed
    Wolfspeed
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - CGHV96100F2 - 850900-CGHV96100F2 - Win Source Electronics
    Win Source Electronics
Request a Quote Datasheet
Description
Wolfspeed’s CGHV96100F2 is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance. Features 145 W POUT typical
Request a Quote Datasheet

Suppliers

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Supplier Links
100-W, 7.9 – 9.6-GHz, 50-ohm, Input/Output-Matched, GaN HEMT Power Amplifier - CGHV96100F2 - Wolfspeed
Wolfspeed
Durham, NC, United States
100-W, 7.9 – 9.6-GHz, 50-ohm, Input/Output-Matched, GaN HEMT Power Amplifier
CGHV96100F2
100-W, 7.9 – 9.6-GHz, 50-ohm, Input/Output-Matched, GaN HEMT Power Amplifier CGHV96100F2
Wolfspeed’s CGHV96100F2 is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance. Features 145 W POUT typical

Wolfspeed’s CGHV96100F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.

Features

  • 145 W POUT typical
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CGHV96100F2 - 850900-CGHV96100F2 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CGHV96100F2
850900-CGHV96100F2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CGHV96100F2 850900-CGHV96100F2
Manufacturer: Cree/Wolfspeed Win Source Part Number: 850900-CGHV96100F2 Series: GaN Features: RF Mosfet 40 V 1 A Package: Tray Family Name: CGHV96100 Categories: Discrete Semiconductor Products ECCN: DISC 3A001B3 Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited Quantity per package: 50 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 23 Weeks HTSUS: 8541.29.0095

Manufacturer: Cree/Wolfspeed
Win Source Part Number: 850900-CGHV96100F2
Series: GaN
Features: RF Mosfet 40 V 1 A
Package: Tray
Family Name: CGHV96100
Categories: Discrete Semiconductor Products
ECCN: DISC 3A001B3
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
Quantity per package: 50
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 23 Weeks
HTSUS: 8541.29.0095

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
RF JFET Transistors
CGHV96100F2
RF JFET Transistors CGHV96100F2
RF JFET Transistors GaN HEMT 7.9-9.6GHz, 100 Watt

RF JFET Transistors GaN HEMT 7.9-9.6GHz, 100 Watt

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Technical Specifications

  Wolfspeed Win Source Electronics VAST STOCK CO., LIMITED
Product Category RF Transistors RF MOSFET Transistors Transistors
Product Number CGHV96100F2 850900-CGHV96100F2 CGHV96100F2
Product Name 100-W, 7.9 – 9.6-GHz, 50-ohm, Input/Output-Matched, GaN HEMT Power Amplifier TRANSISTORS - Transistors - FETs, MOSFETs - RF - CGHV96100F2 RF JFET Transistors
Transistor Technology / Material GaN
Package Type Flange SOT3
Power Gain 10 dB
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