Wolfspeed’s CGHV1F025S is an unmatched, gallium-nitride (GaN), high-electron-mobili
ty transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities. The device can be deployed for L, S, C, X and Ku-band amplifier applications. The data sheet specifications are based on an X-Band (8.9 – 9.6-GHz) amplifier. The CGHV1F025S operates on a 40-volt rail circuit while housed in a 3-mm x 4-mm, surface-mount, dual-flat-no-lead (DFN) package. Under reduced power, the transistor can operate below 40-V to as low as 20-V VDD, maintaining high gain and efficiency.
Features:
Up to 15-GHz operation
Application circuit for 8.9 – 9.6 GHz
Wolfspeed’s CGHV1F025S is an unmatched, gallium-nitride (GaN), high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities. The device can be deployed for L, S, C, X and Ku-band amplifier applications. The data sheet specifications are based on an X-Band (8.9 – 9.6-GHz) amplifier. The CGHV1F025S operates on a 40-volt rail circuit while housed in a 3-mm x 4-mm, surface-mount, dual-flat-no-lead (DFN) package. Under reduced power, the transistor can operate below 40-V to as low as 20-V VDD, maintaining high gain and efficiency.
Features:
- Up to 15-GHz operation
- Application circuit for 8.9 – 9.6 GHz
