Wolfspeed’s CGHV1F006S is an unmatched, gallium-nitride (GaN) high-electron-mobili
ty transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities. The device can be deployed for L, S, C, X and Ku-band amplifier applications. The data sheet specifications are based on a C-Band (5.5 – 6.5-GHz) amplifier. Additional application circuits are available for C-Band at 5.8 GHz - 7.2 GHz and X-Band at 7.9 - 8.4 GHz and 8.5 – 9.6 GHz. The CGHV1F006S operates on a 40-volt rail circuit while housed in a 3-mm x 4-mm, surface-mount, dual-flat-no-lead (DFN) package. Under reduced power, the transistor can operate below 40 V to as low as 20-V VDD, maintaining high gain and efficiency.
Features:
Up to 18-GHz operation
Application circuits for: 5.8 – 7.2 GHz 7.9 – 8.4 GHz 8.5 – 9.6 GHz
Wolfspeed’s CGHV1F006S is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities. The device can be deployed for L, S, C, X and Ku-band amplifier applications. The data sheet specifications are based on a C-Band (5.5 – 6.5-GHz) amplifier. Additional application circuits are available for C-Band at 5.8 GHz - 7.2 GHz and X-Band at 7.9 - 8.4 GHz and 8.5 – 9.6 GHz. The CGHV1F006S operates on a 40-volt rail circuit while housed in a 3-mm x 4-mm, surface-mount, dual-flat-no-lead (DFN) package. Under reduced power, the transistor can operate below 40 V to as low as 20-V VDD, maintaining high gain and efficiency.
Features:
- Up to 18-GHz operation
- Application circuits for:
5.8 – 7.2 GHz
7.9 – 8.4 GHz
8.5 – 9.6 GHz
