Wolfspeed 6-W RF Power GaN HEMT, Plastic CGH40006S

Description
Wolfspeed’s CGH40006S is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGH40006S, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high-efficiency, high-gain and wide-bandwidth capabilities, making the CGH40006S ideal for linear and compressed amplifier circuits. The transistor is available in a 3-mm x 3-mm, surface-mount, dual-flat-no-lead package.
  • 6-W RF Power GaN HEMT, Plastic - CGH40006S - Wolfspeed
    Wolfspeed
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs - 1354334-CGH40006S - Win Source Electronics
    Win Source Electronics
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Description
Wolfspeed’s CGH40006S is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGH40006S, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high-efficiency, high-gain and wide-bandwidth capabilities, making the CGH40006S ideal for linear and compressed amplifier circuits. The transistor is available in a 3-mm x 3-mm, surface-mount, dual-flat-no-lead package.
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Suppliers

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Description
Supplier Links
6-W RF Power GaN HEMT, Plastic - CGH40006S - Wolfspeed
Wolfspeed
Durham, NC, United States
6-W RF Power GaN HEMT, Plastic
CGH40006S
6-W RF Power GaN HEMT, Plastic CGH40006S
Wolfspeed’s CGH40006S is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGH40006S, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high-efficiency, high-gain and wide-bandwidth capabilities, making the CGH40006S ideal for linear and compressed amplifier circuits. The transistor is available in a 3-mm x 3-mm, surface-mount, dual-flat-no-lead package.

Wolfspeed’s CGH40006S is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40006S, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high-efficiency, high-gain and wide-bandwidth capabilities, making the CGH40006S ideal for linear and compressed amplifier circuits. The transistor is available in a 3-mm x 3-mm, surface-mount, dual-flat-no-lead package.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs - 1354334-CGH40006S - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
1354334-CGH40006S
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs 1354334-CGH40006S
Win Source Part Number: 1354334-CGH40006S Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs Fake Threat In the Open Market: 35 pct. MSL Level: 3 (168 Hours) Mfr: Wolfspeed, Inc. Series: GaN Package: Tape & Reel Product Status: Active Frequency: 0Hz ~ 6GHz Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-QFN-EP (3x3) Base Product Number: CGH40 Technology: HEMT HTSUS: 8541.29.0075 Voltage - Rated: 84 V ECCN: EAR99 Gain: 12dB Current - Test: 100 mA Power - Output: 8W Voltage - Test: 28 V

Win Source Part Number: 1354334-CGH40006S
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Fake Threat In the Open Market: 35 pct.
MSL Level: 3 (168 Hours)
Mfr: Wolfspeed, Inc.
Series: GaN
Package: Tape & Reel
Product Status: Active
Frequency: 0Hz ~ 6GHz
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-QFN-EP (3x3)
Base Product Number: CGH40
Technology: HEMT
HTSUS: 8541.29.0075
Voltage - Rated: 84 V
ECCN: EAR99
Gain: 12dB
Current - Test: 100 mA
Power - Output: 8W
Voltage - Test: 28 V

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Technical Specifications

  Wolfspeed Win Source Electronics VAST STOCK CO., LIMITED
Product Category RF Transistors RF MOSFET Transistors Transistors
Product Number CGH40006S 1354334-CGH40006S CGH40006S
Product Name 6-W RF Power GaN HEMT, Plastic Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs RF JFET Transistors
Transistor Technology / Material GaN
Package Type Surface Mount SOT3
Output Power 6 watts 8 watts
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