The CG2H80015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) bare die designed for RF amplification up to 8 GHz, delivering 15 W saturated output power at 28 V drain supply voltage. It features a typical small signal gain of 17 dB at 4 GHz and 12 dB at 8 GHz, with 65% drain efficiency. The die measures 1080 x 880 microns with a thickness of 100 microns, and is mounted using eutectic AuSn solder. It supports operation up to a 225 °C junction temperature and withstands output VSWR up to 10:1. The device is shipped in Gel-Pak® containers with a non-adhesive tacky membrane and requires gold wire bonding for electrical connections.
RF JFET Transistors GaN HEMT Die DC-8.0GHz, 15 Watt
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Transistors |
| Product Number | CG2H80015D-GP4 |
| Product Name | RF JFET Transistors |
| Transistor Type | JFET |
