Wolfspeed 200-W RF Power GaN HEMT CGHV40200PP

Description
Wolfspeed’s CGHV40200PP is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGHV40200PP, operating from a 50-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, making the CGHV40200PP ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package. FEATURES: Up to 3.0 GHz Operation 21 dB Small Signal Gain at 1.8 GHz 250 W Typical PSAT 67% Efficiency at PSAT 50 V Operation
Datasheet
Description
Wolfspeed’s CGHV40200PP is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGHV40200PP, operating from a 50-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, making the CGHV40200PP ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package. FEATURES: Up to 3.0 GHz Operation 21 dB Small Signal Gain at 1.8 GHz 250 W Typical PSAT 67% Efficiency at PSAT 50 V Operation
Datasheet

Suppliers

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Description
Supplier Links
200-W RF Power GaN HEMT - CGHV40200PP - Wolfspeed
Durham, NC, United States
200-W RF Power GaN HEMT
CGHV40200PP
200-W RF Power GaN HEMT CGHV40200PP
Wolfspeed’s CGHV40200PP is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGHV40200PP, operating from a 50-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, making the CGHV40200PP ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package. FEATURES: Up to 3.0 GHz Operation 21 dB Small Signal Gain at 1.8 GHz 250 W Typical PSAT 67% Efficiency at PSAT 50 V Operation

Wolfspeed’s CGHV40200PP is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGHV40200PP, operating from a 50-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, making the CGHV40200PP ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package.

FEATURES:

  • Up to 3.0 GHz Operation
  • 21 dB Small Signal Gain at 1.8 GHz
  • 250 W Typical PSAT
  • 67% Efficiency at PSAT
  • 50 V Operation
Supplier's Site Datasheet
Sheung Wan, Hong Kong
RF JFET Transistors
CGHV40200PP
RF JFET Transistors CGHV40200PP
RF JFET Transistors GaN HEMT DC-2.5GHz, 180 Watt

RF JFET Transistors GaN HEMT DC-2.5GHz, 180 Watt

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Technical Specifications

  Wolfspeed VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors
Product Number CGHV40200PP CGHV40200PP
Product Name 200-W RF Power GaN HEMT RF JFET Transistors
Transistor Technology / Material GaN
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