The CGH55030F1 is a 30 W gallium nitride (GaN) high electron mobility transistor (HEMT) designed for WiMAX and broadband wireless amplifier applications in the 5.5-5.8 GHz range. It is housed in a screw-down flange package (440196) and operates with a 28 V drain supply. The device provides 10 dB small signal gain, 25% drain efficiency at 4 W average power, and maintains less than 2.0% error vector magnitude at 4 W output under 802.16 OFDM modulation. It supports a maximum junction temperature of 225 °C and a case operating temperature range of -40 to 150 °C, with thermal resistance junction-to-case of 4.8 °C/W. The transistor meets JEDEC JESD22 A114-D (HBM 1A) and JESD22 C101-C (CDM II) ESD classification standards.
RF JFET Transistors GaN HEMT 5.5-5.8GHz, 30 Watt
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Transistors |
| Product Number | CGH55030F1 |
| Product Name | RF JFET Transistors |
| Transistor Type | JFET |
