Wolfspeed 120-W, UHF – 2.5-GHz, GaN HEMT for WCDMA, LTE, MC-GSM CGH09120F

Description
Wolfspeed’s CGH09120F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE amplifier applications. The transistor is supplied in a ceramic/metal flange package. High Degree of DPD Correction Can be Applied
  • 120-W, UHF – 2.5-GHz, GaN HEMT for WCDMA, LTE, MC-GSM - CGH09120F - Wolfspeed
    Wolfspeed
Datasheet
Description
Wolfspeed’s CGH09120F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE amplifier applications. The transistor is supplied in a ceramic/metal flange package. High Degree of DPD Correction Can be Applied
Datasheet

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120-W, UHF – 2.5-GHz, GaN HEMT for WCDMA, LTE, MC-GSM - CGH09120F - Wolfspeed
Wolfspeed
Durham, NC, United States
120-W, UHF – 2.5-GHz, GaN HEMT for WCDMA, LTE, MC-GSM
CGH09120F
120-W, UHF – 2.5-GHz, GaN HEMT for WCDMA, LTE, MC-GSM CGH09120F
Wolfspeed’s CGH09120F is a gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE amplifier applications. The transistor is supplied in a ceramic/metal flange package. High Degree of DPD Correction Can be Applied

Wolfspeed’s CGH09120F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE amplifier applications. The transistor is supplied in a ceramic/metal flange package.

  • High Degree of DPD Correction Can be Applied
Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
RF JFET Transistors
CGH09120F
RF JFET Transistors CGH09120F
RF JFET Transistors GaN HEMT UHF-2.5GHz, 120 Watt

RF JFET Transistors GaN HEMT UHF-2.5GHz, 120 Watt

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Technical Specifications

  Wolfspeed VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors
Product Number CGH09120F CGH09120F
Product Name 120-W, UHF – 2.5-GHz, GaN HEMT for WCDMA, LTE, MC-GSM RF JFET Transistors
Transistor Technology / Material GaN
Package Type Flange
Power Gain 21 dB
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