Wolfspeed 120-W RF Power GaN HEMT CGH40120F

Description
Wolfspeed’s CGH40120F is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGH40120F, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, making the CGH40120F ideal for linear and compressed amplifier circuits. The transistor is available in a flange package. FEATURES: Up to 2.5 GHz Operation
  • 120-W RF Power GaN HEMT - CGH40120F - Wolfspeed
    Wolfspeed
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - 1324540-CGH40120F - Win Source Electronics
    Win Source Electronics
Request a Quote Datasheet
Description
Wolfspeed’s CGH40120F is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGH40120F, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, making the CGH40120F ideal for linear and compressed amplifier circuits. The transistor is available in a flange package. FEATURES: Up to 2.5 GHz Operation
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
120-W RF Power GaN HEMT - CGH40120F - Wolfspeed
Wolfspeed
Durham, NC, United States
120-W RF Power GaN HEMT
CGH40120F
120-W RF Power GaN HEMT CGH40120F
Wolfspeed’s CGH40120F is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGH40120F, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, making the CGH40120F ideal for linear and compressed amplifier circuits. The transistor is available in a flange package. FEATURES: Up to 2.5 GHz Operation

Wolfspeed’s CGH40120F is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40120F, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, making the CGH40120F ideal for linear and compressed amplifier circuits. The transistor is available in a flange package.

FEATURES:

  • Up to 2.5 GHz Operation
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - 1324540-CGH40120F - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF
1324540-CGH40120F
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF 1324540-CGH40120F
Manufacturer: Wolfspeed, Inc. Win Source Part Number: 1324540-CGH40120F Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF Packaging: Tray Standard Package: 100 Voltage - Rated: 84 V Frequency: 0Hz ~ 4GHz Current - Test: 1 A Gain: 19dB Transistor Type: HEMT Voltage - Test: 28 V Power - Output: 120W Supplier Device Package: 440193 Case / Package: 440193 ECCN: EAR99 Fake Threat In the Open Market: 78 MSL Level: 1 (Unlimited) Current Rating (Amps): 28A HTSUS: 8541.29.0075 Other Part Number: CGH40120FE Base Product Number: CGH40 RoHS Status: RoHS Compliant

Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1324540-CGH40120F
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Packaging: Tray
Standard Package: 100
Voltage - Rated: 84 V
Frequency: 0Hz ~ 4GHz
Current - Test: 1 A
Gain: 19dB
Transistor Type: HEMT
Voltage - Test: 28 V
Power - Output: 120W
Supplier Device Package: 440193
Case / Package: 440193
ECCN: EAR99
Fake Threat In the Open Market: 78
MSL Level: 1 (Unlimited)
Current Rating (Amps): 28A
HTSUS: 8541.29.0075
Other Part Number: CGH40120FE
Base Product Number: CGH40
RoHS Status: RoHS Compliant

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VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
RF JFET Transistors
CGH40120F
RF JFET Transistors CGH40120F
RF JFET Transistors GaN HEMT DC-2.5GHz, 120 Watt

RF JFET Transistors GaN HEMT DC-2.5GHz, 120 Watt

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Technical Specifications

  Wolfspeed Win Source Electronics VAST STOCK CO., LIMITED
Product Category RF Transistors RF MOSFET Transistors Transistors
Product Number CGH40120F 1324540-CGH40120F CGH40120F
Product Name 120-W RF Power GaN HEMT Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF RF JFET Transistors
Transistor Technology / Material GaN
Package Type Flange/Pill SOT3; 440193
Output Power 120 watts 120 watts
Operating Frequency 3000 MHz 0.0 to 4000 MHz
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