The CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for high-efficiency, high-gain amplification in VHF to 3.0 GHz applications, including WiMAX and LTE. It is supplied in a 440193 ceramic/metal flange package. The device supports a drain-source voltage of up to 120 V and operates with a maximum case temperature of 150°C. It achieves 27% drain efficiency at 8 W average power and maintains an error vector magnitude under 2.0% at 8 W output under 802.16 OFDM modulation. The transistor meets JEDEC JESD22-A114-D (HBM Class 1A) and JESD22-C101-C (CDM Class II) ESD standards. Thermal resistance from junction to case is 2.8 °C/W.
RF JFET Transistors GaN HEMT VHF-3.0GHz, 60 Watt
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Transistors |
| Product Number | CGH27060F |
| Product Name | RF JFET Transistors |
| Transistor Type | JFET |
