Wolfspeed 30-W, DC – 6.0-GHz, 28-V, GaN HEMT CGH27030S

Description
Wolfspeed’s CGH27030S is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE, 4G Telecom and BWA amplifier applications. The CGH27030S operates from a 28 volt rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Features for 28 V in CGH27030S-TB1: 1.8 - 2.2 GHz Operation High degree of APD and DPD correction can be applied Features for 28 V in CGH27030S-TB2: 2.3 - 2.7 GHz Operation High degree of APD and DPD correction can be applied
Datasheet
Description
Wolfspeed’s CGH27030S is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE, 4G Telecom and BWA amplifier applications. The CGH27030S operates from a 28 volt rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Features for 28 V in CGH27030S-TB1: 1.8 - 2.2 GHz Operation High degree of APD and DPD correction can be applied Features for 28 V in CGH27030S-TB2: 2.3 - 2.7 GHz Operation High degree of APD and DPD correction can be applied
Datasheet

Suppliers

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30-W, DC – 6.0-GHz, 28-V, GaN HEMT - CGH27030S - Wolfspeed
Durham, NC, United States
30-W, DC – 6.0-GHz, 28-V, GaN HEMT
CGH27030S
30-W, DC – 6.0-GHz, 28-V, GaN HEMT CGH27030S
Wolfspeed’s CGH27030S is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE, 4G Telecom and BWA amplifier applications. The CGH27030S operates from a 28 volt rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Features for 28 V in CGH27030S-TB1: 1.8 - 2.2 GHz Operation High degree of APD and DPD correction can be applied Features for 28 V in CGH27030S-TB2: 2.3 - 2.7 GHz Operation High degree of APD and DPD correction can be applied

Wolfspeed’s CGH27030S is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030S ideal for LTE, 4G Telecom and BWA amplifier applications. The CGH27030S operates from a 28 volt rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package.

Features for 28 V in CGH27030S-TB1:

  • 1.8 - 2.2 GHz Operation
  • High degree of APD and DPD correction can be applied

Features for 28 V in CGH27030S-TB2:

  • 2.3 - 2.7 GHz Operation
  • High degree of APD and DPD correction can be applied
Supplier's Site Datasheet
Sheung Wan, Hong Kong
RF JFET Transistors
CGH27030S
RF JFET Transistors CGH27030S
RF JFET Transistors GaN HEMT DC-6.0GHz, 30 Watt

RF JFET Transistors GaN HEMT DC-6.0GHz, 30 Watt

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Technical Specifications

  Wolfspeed VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors
Product Number CGH27030S CGH27030S
Product Name 30-W, DC – 6.0-GHz, 28-V, GaN HEMT RF JFET Transistors
Transistor Technology / Material GaN
Package Type Surface Mount
Power Gain 18 dB
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