Wolfspeed 15 W, DC - 6.0 GHz, 50 V, GaN HEMT CGHV27015S

Description
Wolfspeed’s CGHV27015S is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE, 4G Telecom and BWA amplifier applications. The CGHV27015S GaN HEMT devices are suitable for 3300-3500MHz, 4900-5900MHz, 700-960MHz, 1800-2200MHz, 2500-2700MHz and extended S and C Band applications. The CGHV27015S operates from a 50 volt rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Features for 50 V in CGHV27015S-TB1 2.4 - 2.7 GHz Operation High degree of APD and DPD correction can be applied
Datasheet
Description
Wolfspeed’s CGHV27015S is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE, 4G Telecom and BWA amplifier applications. The CGHV27015S GaN HEMT devices are suitable for 3300-3500MHz, 4900-5900MHz, 700-960MHz, 1800-2200MHz, 2500-2700MHz and extended S and C Band applications. The CGHV27015S operates from a 50 volt rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Features for 50 V in CGHV27015S-TB1 2.4 - 2.7 GHz Operation High degree of APD and DPD correction can be applied
Datasheet

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15 W, DC - 6.0 GHz, 50 V, GaN HEMT - CGHV27015S - Wolfspeed
Durham, NC, United States
15 W, DC - 6.0 GHz, 50 V, GaN HEMT
CGHV27015S
15 W, DC - 6.0 GHz, 50 V, GaN HEMT CGHV27015S
Wolfspeed’s CGHV27015S is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE, 4G Telecom and BWA amplifier applications. The CGHV27015S GaN HEMT devices are suitable for 3300-3500MHz, 4900-5900MHz, 700-960MHz, 1800-2200MHz, 2500-2700MHz and extended S and C Band applications. The CGHV27015S operates from a 50 volt rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Features for 50 V in CGHV27015S-TB1 2.4 - 2.7 GHz Operation High degree of APD and DPD correction can be applied

Wolfspeed’s CGHV27015S is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE, 4G Telecom and BWA amplifier applications. The CGHV27015S GaN HEMT devices are suitable for 3300-3500MHz, 4900-5900MHz, 700-960MHz, 1800-2200MHz, 2500-2700MHz and extended S and C Band applications. The CGHV27015S operates from a 50 volt rail. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package.

Features for 50 V in CGHV27015S-TB1

  • 2.4 - 2.7 GHz Operation
  • High degree of APD and DPD correction can be applied
Supplier's Site Datasheet
Sheung Wan, Hong Kong
RF JFET Transistors
CGHV27015S
RF JFET Transistors CGHV27015S
RF JFET Transistors GaN HEMT DC-6.0GHz, 15 Watt

RF JFET Transistors GaN HEMT DC-6.0GHz, 15 Watt

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Technical Specifications

  Wolfspeed VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors
Product Number CGHV27015S CGHV27015S
Product Name 15 W, DC - 6.0 GHz, 50 V, GaN HEMT RF JFET Transistors
Transistor Technology / Material GaN
Package Type Surface Mount
Power Gain 21 dB
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