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Qorvo Datasheets for RF Transistors

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
RF Transistors: Learn more

Product Name Notes
UF3C120150K3S
UF3SC065030D8S
UF3SC065040D8S
DC - 3.6 GHz, 75 Watt, 48 Volt GaN RF Power Transistor -- QPD0050
Qorvo's QPD0050 is a wide band over-molded QFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor. The QPD0050 can be used in Doherty architecture for...
1.2 - 1.4 GHz, 500 Watt, 50 Volt, GaN RF IMFET -- QPD1003
Qorvo's QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN...
DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor -- QPD1008
Qorvo's QPD1008 is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz and a 50V supply rail. The device is in...
DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor -- QPD1008L
Qorvo's QPD1008L is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz and a 50V supply rail. The device is in...
DC - 4 GHz, 10 Watt, 50 Volt GaN RF Transistor -- QPD1010
Qorvo's QPD1010 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which features...
DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor -- QPD1015
Qorvo's QPD1015 is a 65 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.7 GHz and a 50V supply rail. The device is in...
DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor -- QPD1015L
Qorvo's QPD1015L is a 65 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.7 GHz and a 50V supply rail. The device is in...
DC - 20 GHz, 180 um Discrete GaAs pHEMT Die -- QPD2018D
Qorvo's QPD2018D is a discrete 180-micron pHEMT which operates from DC to 20 GHz. The QPD2018D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features...
DC - 20 GHz, 250 um Discrete GaAs pHEMT Die -- QPD2025D
Qorvo's QPD2025D is a discrete 250-micron pHEMT which operates from DC to 20 GHz. The QPD2025D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features...
DC - 20 GHz, 400 um Discrete GaAs pHEMT Die -- QPD2040D
Qorvo's QPD2040D is a discrete 400-micron pHEMT which operates from DC to 20 GHz. The QPD2040D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features...
DC - 20 GHz, 600 um Discrete GaAs pHEMT Die -- QPD2060D
Qorvo's QPD2060D is a discrete 600-micron pHEMT which operates from DC to 20 GHz. The QPD2060D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features...
DC - 20 GHz, 800 um Discrete GaAs pHEMT Die -- QPD2080D
Qorvo's QPD2080D is a discrete 800-micron pHEMT which operates from DC to 20 GHz. The QPD2080D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features...
DC - 20 GHz, 1200 um Discrete GaAs pHEMT Die -- QPD2120D
Qorvo's QPD2120D is a discrete 1200-micron pHEMT which operates from DC to 20 GHz. The QPD2120D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features...
DC - 20 GHz, 1600 um Discrete GaAs pHEMT Die -- QPD2160D
Qorvo's QPD2160D is a discrete 1600-micron pHEMT which operates from DC to 20 GHz. The QPD2160D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features...
DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor -- T1G4020036-FL
Qorvo's T1G4020036-FL is a 2 x 200 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 50V supply rail. The...
DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor -- T1G4020036-FS
Qorvo's T1G4020036-FS is a 2 x 200 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 50V supply rail. The...
DC - 3.5 GHz, 55 Watt, 28 V GaN RF Power Transistor -- T2G4005528-FS
Qorvo's T2G4005528-FS is a 55 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 28V supply rail. The device is...
DC - 6 GHz, 10 Watt, 28 V GaN RF Power Transistor -- T2G6000528-Q3
Qorvo's T2G6000528-Q3 is a 10 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in...
DC - 6 GHz, 15 Watt, 28 V GaN RF Power Transistor -- T2G6001528-Q3
Qorvo's T2G6001528-Q3 is a 15 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in...
DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor -- T2G6003028-FL
Qorvo's T2G6003028-FL is a 30 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is...
DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor -- T2G6003028-FS
Qorvo's T2G6003028-FS is a 30 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is...
DC - 18 GHz, 6 Watt Discrete Power GaN on SiC HEMT -- TGF2023-2-01
Qorvo's TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC to 18 GHz. The device typically provides 38 dBm of saturated output power with power...
DC - 18 GHz, 12 Watt Discrete Power GaN on SiC HEMT -- TGF2023-2-02
Qorvo's TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC to 18 GHz. The TGF2023-2-02 typically provides 40.1 dBm of saturated output power with power...
DC - 18 GHz, 25 Watt Discrete Power GaN on SiC HEMT -- TGF2023-2-05
Qorvo's TGF2023-2-05 is a discrete 5.0 mm GaN on SiC HEMT which operates from DC to 18 GHz. The TGF2023-2-05 typically provides 43 dBm of saturated output power with power...
DC - 14 GHz, 50 Watt Discrete Power GaN on SiC HEMT -- TGF2023-2-10
Qorvo's TGF2023-2-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC to 14 GHz. The TGF2023-2-10 typically provides 47.4 dBm of saturated output power with power...
DC - 14 GHz, 100 Watt Discrete Power GaN on SiC HEMT -- TGF2023-2-20
Qorvo's TGF2023-2-20 is a discrete 20 mm GaN on SiCHEMT which operates from DC to 14 GHz. The TGF2023-2-20 typically provides 50.5 dBm of saturated output power with power gain...
DC - 3.5 GHz, 100 Watt, 28 V GaN RF Power Transistor -- TGF2929-FL
Qorvo's TGF2929-FL is a 100 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 28V supply rail. The device is...
DC - 12 GHz, 27 Watt Discrete Power GaN on SiC HEMT -- TGF2954
Qorvo's TGF2954 is a discrete 5.04 mm GaN on SiC HEMT which operates from DC-12 GHz. The TGF2954 typically provides 44.5 dBm of saturated output power with power gain of...
0.03 - 3 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor -- TGF2965-SM
Qorvo's TGF2965-SM is a 6W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 0.03 to 3.0 GHz. The integrated input matching network enables wideband gain and...
DC - 12 GHz, 5 Watt, 32 V GaN RF Transistor -- TGF2977-SM
Qorvo's TGF2977-SM is a 5 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in...
DC - 12 GHz, 20 Watt, 32 V GaN RF Transistor -- TGF2978-SM
Qorvo's TGF2978-SM is a 20 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in...
DC - 12 GHz, 25 Watt, 32 Volt GaN RF Transistor -- TGF2979-SM
Qorvo's TGF2979-SM is a 25 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in...
0.03 - 3.0 GHz, 10 Watt, 32 Volt GaN RF Input-Matched Transistor -- TGF3015-SM
Qorvo's TGF3015-SM is a 10W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 3.0 GHz. The integrated input matching network enables wideband gain...
4 - 6 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor -- TGF3020-SM
Qorvo's TGF3020-SM is a 5W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 4.0 to 6.0 GHz. The integrated input matching network enables wideband gain and...
0.03 - 4.0 GHz, 30 Watt, 32 V GaN RF Transistor -- TGF3021-SM
Qorvo's TGF3021-SM is a 30 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 4 GHz and a 32V supply rail. The device is in...
650 V, 27 mohm SiC FET -- UF3C065030B3
Qorvo's UF3C065030B3 650 V, 27 mohm SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device...
650 V, 27 mohm SiC FET -- UF3C065030K3S
Qorvo's UF3C065030K3S 650 V, 27 mohm RDS(on) cascode SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive...
650 V, 27 mohm SiC FET -- UF3C065030K4S
Qorvo's UF3C065030K4S 650 V, 27 mohm SiC FET products co-package its high-performance Gen 3 SiC fast JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC...
650 V, 27 mohm SiC FET -- UF3C065030T3S
Qorvo's UF3C065030T3S 650 V, 27 mohm SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device...
650 V, 42 mohm SiC FET -- UF3C065040B3
Qorvo's UF3C065040B3 650 V, 42 mohm SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device...
650 V, 42 mohm SiC FET -- UF3C065040K3S
Qorvo's UF3C065040K3S 650 V, 42 mohm RDS(on) cascode SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive...
650 V, 42 mohm SiC FET -- UF3C065040K4S
Qorvo's UF3C065040K4S 650 V, 42 mohm RDS(on) cascode SiC FET products co-package its high-performance Gen 3 SiC fast JFETs with a FET optimized MOSFET to produce the only standard gate...
650 V, 42 mohm SiC FET -- UF3C065040T3S
Qorvo's UF3C065040T3S 650 V, 42 mohm RDS(on) cascode SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive...
650 V, 80 mohm SiC FET -- UF3C065080B3
Qorvo's UF3C065080B3 650 V, 80 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET...
650 V, 85 mohm SiC FET -- UF3C065080B7S
Qorvo's UF3C065080B7S 650 V, 85 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET...
650 V, 80 mohm SiC FET -- UF3C065080K3S
Qorvo's UF3C065080K3S 650 V, 80 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET...
650 V, 80 mohm SiC FET -- UF3C065080K4S
Qorvo's UF3C065080K4S 650 V, 80 mohm SiC FET products co-package its high-performance F3 SiC fast JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device...
650 V, 80 mohm SiC FET -- UF3C065080T3S
Qorvo's UF3C065080T3S 650 V, 80 mohm RDS(on) cascode SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive...
1200 V, 35 mohm SiC FET -- UF3C120040K3S
Qorvo's UF3C120040K3S 1200 V, 35 mohm RDS(on) cascode SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive...
1200 V, 35 mohm SiC FET -- UF3C120040K4S
Qorvo's UF3C120040K4S is a 1200 V, 35 mohm RDS(on) cascode SiC FET products co-package its high-performance Gen 3 SiC fast JFETs with a FET optimized MOSFET to produce the only...
1200 V, 85 mohm SiC FET -- UF3C120080B7S
Qorvo's UF3C120080B7S 1200 V, 85 mohm SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to...
1200 V, 80 mohm SiC FET -- UF3C120080K3S
Qorvo's UF3C120080K3S 1200 V, 80 mohm SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to...
1200 V, 80 mohm SiC FET -- UF3C120080K4S
Qorvo's UF3C120080K4S 1200 V, 80 mohm FET products co-package its high-performance Gen 3 SiC fast JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device...
1200 V, 150 mohm SiC FET -- UF3C120150B7S
Qorvo's UF3C120150B7S 1200 V, 150 mohm SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to...
1200 V, 150 mohm SiC FET -- UF3C120150K4S
Qorvo's UF3C120150K4S 1200 V, 150 mohm SiC FET products co-package its high-performance F3 SiC fast JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device...
1200 V, 410 mohm SiC FET -- UF3C120400B7S
Qorvo's UF3C120400B7S (QF3CG41M) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off...
1200 V, 410 mohm SiC FET -- UF3C120400K3S
Qorvo's UF3C120400K3S 1200 V, 410 mohm SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to...
1700 V, 410 mohm SiC FET -- UF3C170400B7S
Qorvo's UF3C170400B7S SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC...
1700 V, 410 mohm SiC FET -- UF3C170400K3S
Qorvo's UF3C170400K3S 1700 V, 410 mohm SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to...
1200 V, 7.1 mOhm Normally-On SiC JFET -- UF3N120007K4S
Qorvo's UF3N120007K4S is a 1200 V, 7.1 mohm high-performance Gen 3 normally-on SiC JFET transistor. This device exhibits ultra-low on resistance (RDS(on)) in a standard TO-247-4L package, making...
1700 V, 400 mohm Normally-On SiC JFET -- UF3N170400B7S
Qorvo's UF3N170400B7S is a 1700 V, 400 mohm high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction...
650 V, 6.7 mohm SiC FET -- UF3SC065007K4S
Qorvo's UF3SC065007K4S 650 V, 6.7 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET...
650 V, 27 mohm SiC FET -- UF3SC065030B7S
Qorvo's UF3SC065030B7S 650 V, 27 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET...
650 V, 42 mohm SiC FET -- UF3SC065040B7S
Qorvo's UF3SC065040B7S 650 V, 42 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET...
1200 V, 8.6 mohm SiC FET -- UF3SC120009K4S
Qorvo's UF3SC120009K4S 1200 V, 8.6 mohm SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to...
1200 V, 16 mohm SiC FET -- UF3SC120016K3S
Qorvo's UF3SC120016K3S 1200 V, 16 mohm SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to...
1200 V, 16 mohm SiC FET -- UF3SC120016K4S
Qorvo's UF3SC120016K4S 1200 V, 16 mohm SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to...
1200 V, 35 mohm SiC FET -- UF3SC120040B7S
Qorvo's UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a...
1200 V, 53 mohm SiC FET -- UF4C120053K3S
Qorvo's UF4C120053K3S is a 1200 V, 53 mohm RDS(on) Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged...
1200 V, 53 mohm SiC FET -- UF4C120053K4S
Qorvo's UF4C120053K4S is a 1200 V, 53 mohm RDS(on) Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged...
1200 V, 72 mohm SiC FET -- UF4C120070K3S
Qorvo's UF4C120070K3S is a 1200 V, 72 mohm RDS(on) Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged...
1200 V, 72 mohm SiC FET -- UF4C120070K4S
Qorvo's UF4C120070K4S is a 1200 V, 72 mohm RDS(on) Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged...
1200 V, 23 mohm SiC FET -- UF4SC120023K4S
Qorvo's UF4SC120023K4S is a 1200 V, 23 mohm RDS(on) Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged...
1200 V, 30 mohm SiC FET -- UF4SC120030K4S
Qorvo's UF4SC120030K4S is a 1200 V, 30 mohm RDS(on) Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged...
650 V, 27 mohm SiC FET -- UJ3C065030B3
Qorvo's UJ3C065030B3 650 V, 27 mohm RDS(on) SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC...
650 V, 27 mohm SiC FET -- UJ3C065030K3S
Qorvo's UJ3C065030K3S 650 V, 27 mohm RDS(on) SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC...
650 V, 27 mohm SiC FET -- UJ3C065030T3S
Qorvo's UJ3C065030T3S is a 650 V, 27 mohm RDS(on) SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate...
650 V, 80 mohm SiC FET -- UJ3C065080B3
Qorvo's UJ3C065080B3 650 V, 80 mohm RDS(on) SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC...
650 V, 80 mohm SiC FET -- UJ3C065080K3S
Qorvo's UJ3C065080K3S 650 V, 80 mohm RDS(on) SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC...
650 V, 80 mohm SiC FET -- UJ3C065080T3S
Qorvo's UJ3C065080T3S is a 650 V, 80 mohm RDS(on) SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate...
1200 V, 35 mohm SiC FET -- UJ3C120040K3S
Qorvo's UJ3C120040K3S 1200 V, 35 mohm RDS(on) SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC...
1200 V, 70 mohm SiC FET -- UJ3C120070K3S
Qorvo's UJ3C120070K3S 1200 V, 70 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET...
1200 V, 70 mohm SiC FET -- UJ3C120070K4S
Qorvo's UJ3C120070K4S is a 1200 V, 70 mohm Gen 3 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with...
1200 V, 80 mohm SiC FET -- UJ3C120080K3S
Qorvo's UJ3C120080K3S 1200 V, 80 mohm RDS(on) SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC...
1200 V, 150 mohm SiC FET -- UJ3C120150K3S
Qorvo's UJ3C120150K3S 1200 V, 150 mohm SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device...
650 V, 25 mohm Normally-On SiC JFET -- UJ3N065025K3S
Qorvo's UJ3N065025K3S is a 650 V, 25 mohm high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction...
650 V, 80 mohm Normally-On SiC JFET -- UJ3N065080K3S
Qorvo's UJ3N065080K3S is a 650 V, 80 mohm high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction...
1200 V, 35 mohm Normally-On SiC JFET -- UJ3N120035K3S
Qorvo's UJ3N120035K3S is a 1200 V, 35 mohm high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction...
1200 V, 66 mohm Normally-On SiC JFET -- UJ3N120065K3S
Qorvo's UJ3N120065K3S is a 1200 V, 66 mohm high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction...
1200 V, 70 mohm Normally-On SiC JFET -- UJ3N120070K3S
Qorvo's UJ3N120070K3S is a 1200 V, 70 mohm high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction...
750 V, 18 mohm SiC FET -- UJ4C075018K3S
Qorvo's UJ4C075018K3S is a 750 V, 18 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with...
750 V, 18 mohm SiC FET -- UJ4C075018K4S
Qorvo's UJ4C075018K4S is a 750 V, 18 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with...
750 V, 23 mohm SiC FET -- UJ4C075023B7S
Qorvo's UJ4C075023B7S is a 750 V, 23 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with...
750 V, 23 mohm SiC FET -- UJ4C075023K3S
Qorvo's UJ4C075023K3S is a 750 V, 23 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with...
750 V, 23 mohm SiC FET -- UJ4C075023K4S
Qorvo's UJ4C075023K4S is a 750 V, 23 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with...
750 V, 33 mohm SiC FET -- UJ4C075033B7S
Qorvo's UJ4C075033B7S is a 750 V, 33 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with...
750 V, 33 mohm SiC FET -- UJ4C075033K3S
Qorvo's UJ4C075033K3S is a 750 V, 33 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with...
750 V, 33 mohm SiC FET -- UJ4C075033K4S
Qorvo's UJ4C075033K4S is a 750 V, 33 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with...
750 V, 44 mohm SiC FET -- UJ4C075044B7S
Qorvo's UJ4C075044B7S is a 750 V, 44 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with...
750 V, 44 mohm SiC FET -- UJ4C075044K3S
Qorvo's UJ4C075044K3S is a 750 V, 44 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with...
750 V, 44 mohm SiC FET -- UJ4C075044K4S
Qorvo's UJ4C075044K4S is a 750 V, 44 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with...
750 V, 58 mohm SiC FET -- UJ4C075060B7S
Qorvo's UJ4C075060B7S is a 750 V, 58 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with...
750 V, 58 mohm SiC FET -- UJ4C075060K3S
Qorvo's UJ4C075060K3S is a 750 V, 58 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with...
750 V, 58 mohm SiC FET -- UJ4C075060K4S
Qorvo's UJ4C075060K4S is a 750 V, 58 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with...
750 V, 4.3 mOhm Normally-On SiC JFET -- UJ4N075004L8S
Qorvo's UJ4N075004L8S is a 750 V, 4.3 mohm high-performance Gen 4 normally-on SiC JFET transistor. This device exhibits ultra-low on resistance (RDS(on)) in a compact TOLL package, making...
750 V, 4.8 mohm Normally-On SiC JFET -- UJ4N075005K4S
Qorvo's UJ4N075005K4S is a 750 V, 4.8 mohm high-performance Gen 4 normally-on SiC JFET transistor. This device exhibits ultra-low on resistance (RDS(on)) in a standard TO-247-4L package, making...
750 V, 5.4 mohm SiC FET -- UJ4SC075005L8S
Qorvo's UJ4SC075005L8S is a 750 V, 5.4 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with...
750 V, 5.9 mohm SiC FET -- UJ4SC075006K4S
Qorvo's UJ4SC075006K4S is a 750 V, 5.9 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with...
750 V, 8.6 mohm SiC FET -- UJ4SC075008L8S
Qorvo's UJ4SC075008L8S is a 750 V, 8.6 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with...
750 V, 9 mohm SiC FET -- UJ4SC075009B7S
Qorvo's UJ4SC075009B7S is a 750 V, 9 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with...
750 V, 9 mohm SiC FET -- UJ4SC075009K4S
Qorvo's UJ4SC075009K4S is a 750 V, 9 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with...
750 V, 11 mohm SiC FET -- UJ4SC075011B7S
Qorvo's UJ4SC075011B7S is a 750 V, 11 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with...
750 V, 11 mohm SiC FET -- UJ4SC075011K4S
Qorvo's UJ4SC075011K4S is a 750 V, 11 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with...
750 V, 18 mohm SiC FET -- UJ4SC075018B7S
Qorvo's UJ4SC075018B7S is a 750 V, 18 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with...
750 V, 18 mohm SiC FET -- UJ4SC075018L8S
Qorvo's UJ4SC075018L8S is a 750 V, 18 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with...
DC - 4 GHz, 15 Watt, 50 Volt GaN RF Transistor -- QPD1009
The Qorvo QPD1009 is a 15 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which...
DC - 2.7 GHz, 150 Watt, 65 Volt GaN RF Transistor -- QPD1013
The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz. This is a single stage unmatched power amplifier transistor in...
500 Watt, 50 Volt, DC - 1.7 GHz, GaN RF Transistor -- QPD1016
The Qorvo QPD1016 is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply. The device is in an...
500 Watt, 50 Volt, DC - 1.7 GHz, GaN RF Transistor -- QPD1016L
The Qorvo QPD1016L is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply. The device is in an...
DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor -- QPD1022
The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier...
1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor -- QPD1025
The Qorvo QPD1025 is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96 to 1.215 GHz. Input prematch within the package results in ease of external...
1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor -- QPD1025L
The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96to 1.215 GHz. Input prematch within the package results in ease of external board...
1300 Watt, 65 Volt, 420 - 450 MHz GaN RF Input-Matched Transistor -- QPD1026L
The Qorvo QPD1026L is a 1300 W (P3dB) discrete GaN on SiC HEMT which operates from 420 to 450 MHz. Input prematch within the package results in ease of external...
1500 Watt, 65 Volt, 1.2 - 1.4 GHz, GaN RF Input-Matched Transistor -- QPD1029L
The Qorvo QPD1029L is a 1500 W (P3dB) discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz. Input prematch within the package results in ease of external...
DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg.Power, 50 Volt, GaN RF Power Transistor -- TGF2819-FL
The Qorvo TGF2819-FL is a greater-than 200 W Peak (40 W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 4.0 GHz. The device is constructed with...
DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg. Power, 50 Volt, GaN RF Power Transistor -- TGF2819-FS
The Qorvo TGF2819-FS is a greater-than 200 W Peak (40 W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 4.0 GHz. The device is constructed with...
DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor -- TGF2933
The Qorvo TGF2933 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's...
DC - 25 GHz, 10 Watt, 28 V GaN RF Transistor -- TGF2936
The Qorvo TGF2936 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's...
5 - 300 MHz, 35 dB, 12 V, Si BJT Reverse MCM -- QPA5368
The QPA5368 is an Integrated Reverse Amplifier Module. The part employs Silicon Bipolar die, has high output capability and is operated from 5 MHz to 300 MHz. It provides excellent...
2.5 - 5.0 GHz, 8 Watt, 48 Volt GaN RF Transistor -- QPD0005
The QPD0005 is a single-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 2.5 to 5.0 GHz. It is a single-stage, unmatched transistor capable...
DC - 5 GHz, 20 Watt, 48 Volt, GaN RF Transistor -- QPD0007
The QPD0007 is a single-path discrete GaN on SiC HEMT in a DFN package which operates from DC to 5 GHz. It is a single-stage, unmatched transistor capable of delivering...
DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor -- QPD0020
The QPD0020 is a 35 Watt unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for...
DC - 5 GHz, 45 Watt, 48 Volt GaN RF Power Transistor -- QPD0030
The QPD0030 is a 45W (P3dB) unmatched discrete GaN on SiC HEMT which operates from DC to 5GHz on a 48V supply rail. It is ideally suited for basestation, radar...
DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor -- QPD0060
The QPD0060 is a wide band over-molded DFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor. The QPD0060 can be used in Doherty architecture for...
450 Watt, 50 Volt, 1.2 - 1.4 GHz GaN IMFET -- QPD1006
The QPD1006 is a 450 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN...
1.2 - 1.4 GHz, 750 Watt, 65 Volt, GaN on SiC RF Transistor -- QPD1028
The QPD1028 is a 750W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 59dBm of saturated output power with 18dB of large-signal gain and...
1.2 - 1.4 GHz, 750 Watt, 65 Volt GaN on SiC RF Transistor -- QPD1028L
The QPD1028L is a 750W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 59dBm of saturated output power with 18dB of large-signal gain and...
DC-6 GHz, 40 Watt, 50 Volt GaN RF Power Transistor -- QPD1035
The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is...
DC-6 GHz, 40 Watt, 50 Volt GaN RF Power Transistor -- QPD1035L
The QPD1035L is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is...
45 - 1218 MHz, 36dB, 12V, GaAs pHEMT-MESFET, Edge QAM MCM -- RFAM3620
The RFAM3620 is an Integrated Edge QAM Amplifier Module. The part employs GaAs pHEMT die, GaAs MESFET die, a 20 dB range variable attenuator and a power enable feature, has...
1200 V, 53 mohm SiC FET -- UF4C120053B7S
The UF4C120053B7S is a 1200V, 53 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si...
1200 V, 72 mohm SiC FET -- UF4C120070B7S
The UF4C120070B7S is a 1200V, 72mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET...
750 V, 23 mohm SiC FET -- UJ4C075023L8S
The UJ4C075023L8S is a 750V, 23 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si...
750 V, 33 mohm SiC FET -- UJ4C075033L8S
The UJ4C075033L8S is a 750V, 33 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si...
750 V, 44 mohm SiC FET -- UJ4C075044L8S
The UJ4C075044L8S is a 750V, 44 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si...
750 V, 58 mohm SiC FET -- UJ4C075060L8S
The UJ4C075060L8S is a 750V, 58 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si...
750 V, 10.7 mohm SiC FET -- UJ4SC075010L8S
The UJ4SC075010L8S is a 750V, 10.7 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si...
1200 V, 23 mohm SiC FET -- UF4SC120023B7S
1200 V, 30 mohm SiC FET -- UF4SC120030B7S
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET...