Qorvo Datasheets for RF Transistors

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
RF Transistors: Learn more

Product Name Notes
DC - 3.6 GHz, 75 Watt, 48 Volt GaN RF Power Transistor -- QPD0050 Qorvo's QPD0050 is a wide band over-molded QFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor. The QPD0050 can be used in Doherty architecture for...
0.03 - 1.215 GHz, 15 Watt, 28 V GaN RF Input-Matched Transistor -- QPD1000 Qorvo's QPD1000 is a 15W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 1.215 GHz. The integrated input matching network enables wideband gain and...
1.2 - 1.4 GHz, 500 Watt, 50 Volt, GaN RF IMFET -- QPD1003 Qorvo's QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN...
DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor -- QPD1008 Qorvo's QPD1008 is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz and a 50V supply rail. The device is in...
DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor -- QPD1008L Qorvo's QPD1008L is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz and a 50V supply rail. The device is in...
DC - 4 GHz, 10 Watt, 50 V GaN RF Transistor -- QPD1010 Qorvo's QPD1010 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which features...
DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor -- QPD1015 Qorvo's QPD1015 is a 65 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.7 GHz and a 50V supply rail. The device is in...
DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor -- QPD1015L Qorvo's QPD1015L is a 65 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.7 GHz and a 50V supply rail. The device is in...
1.8 - 2.4 GHz, 220 Watt, 48 V GaN RF Power Transistor -- QPD1823 Qorvo's QPD1823 is a discrete GaN on SiC HEMT which operates from 1.8-2.4 GHz. The device is a single stage matched power amplifier transistor. The QPD1823 can be used in...
2.62 - 2.69 GHz, 200 Watt, 48 V GaN RF Power Transistor -- QPD2793 Qorvo's QPD2793 is a discrete GaN on SiC HEMT which operates from 2.62-2.69 GHz. The device is a single stage matched power amplifier transistor. The QPD2793 can be used in...
2.5 - 2.7 GHz, 360 Watt, 48 V GaN RF Power Transistor -- QPD2795 Qorvo's QPD2795 is a discrete GaN on SiC HEMT which operates from 2.5-2.7GHz. The device is a single stage matched power amplifier transistor. The QPD2795 can be used in Doherty...
2.5 - 2.7 GHz, 200 Watt, 48 V GaN RF Power Transistor -- QPD2796 Qorvo's QPD2796 is a discrete GaN on SiC HEMT which operates from 2.5–2.7 GHz. The device is a single stage matched power amplifier transistor. The QPD2796 can be used in...
3.4 - 3.6 GHz, 180 Watt, 50 Volt GaN RF Power Transistor -- QPD3601 Qorvo's QPD3601 is a discrete GaN on SiC HEMT which operates from 3.4-3.6 GHz. The device is a single stage matched power amplifier transistor. The QPD3601 can be used in...
3.4 - 3.8 GHz, 85 Watt, 48 V GaN RF Power Transistor -- QPD3800 Qorvo's QPD3800 is a discrete GaN on SiC HEMT which operates from 3.4-3.8 GHz. The device is a single stage matched power amplifier transistor. The QPD38000 can be used in...
DC - 2 GHz, 285 Watt, 36 V GaN RF Power Transistor -- T1G2028536-FL Qorvo's T1G2028536-FL is a 285 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2 GHz. The device is constructed with Qorvo's proven TQGaN25HV process, which features...
DC - 2 GHz, 285 Watt, 36 V GaN RF Power Transistor -- T1G2028536-FS Qorvo's T1G2028536-FS is a 285 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2 GHz. The device is constructed with Qorvo's proven TQGaN25HV process, which features...
DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor -- T1G4020036-FL Qorvo's T1G4020036-FL is a 2 x 200 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 50V supply rail. The...
DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor -- T1G4020036-FS Qorvo's T1G4020036-FS is a 2 x 200 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 50V supply rail. The...
DC - 3.5 GHz, 55 Watt, 28 V GaN RF Power Transistor -- T2G4005528-FS Qorvo's T2G4005528-FS is a 55 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 28V supply rail. The device is...
DC - 6 GHz, 7 Watt, 28 V GaN RF Power Transistor -- T2G6000528-Q3 Qorvo's T2G6000528-Q3 is a 10 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in...
DC - 6 GHz, 15 Watt, 28 V GaN RF Power Transistor -- T2G6001528-Q3 Qorvo's T2G6001528-Q3 is a 15 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in...
DC - 6 GHz, 15 Watt, 28 V GaN RF Power Transistor -- T2G6001528-SG Qorvo's T2G6001528-SG is a 15 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in...
DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor -- T2G6003028-FL Qorvo's T2G6003028-FL is a 30 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is...
DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor -- T2G6003028-FS Qorvo's T2G6003028-FS is a 30 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is...
50 - 1000 MHz GaN MMIC CATV Power Doubler -- TAT9988 Qorvo's TAT9988 is an ultra-linear, packaged GaN HEMT MMIC amplifier, intended for output stage amplification in CATV infrastructure applications. The TAT9988 utilizes the high output low power consumption capability of...
DC - 20 GHz, 180 um Discrete GaAs pHEMT Die -- TGF2018 Qorvo's TGF2018 is a discrete 180-Micron pHEMT which operates from DC to 20 GHz. The TGF2018 is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features...
DC - 18 GHz, 6 Watt Discrete Power GaN on SiC HEMT -- TGF2023-2-01 Qorvo's TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC to 18 GHz. The device typically provides 38 dBm of saturated output power with power...
DC - 18 GHz, 12 Watt Discrete Power GaN on SiC HEMT -- TGF2023-2-02 Qorvo's TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC to 18 GHz. The TGF2023-2-02 typically provides 40.1 dBm of saturated output power with power...
DC - 18 GHz, 25 Watt Discrete Power GaN on SiC HEMT -- TGF2023-2-05 Qorvo's TGF2023-2-05 is a discrete 5.0 mm GaN on SiC HEMT which operates from DC to 18 GHz. The TGF2023-2-05 typically provides 43 dBm of saturated output power with power...
DC - 14 GHz, 50 Watt Discrete Power GaN on SiC HEMT -- TGF2023-2-10 Qorvo's TGF2023-2-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC to 14 GHz. The TGF2023-2-10 typically provides 47.4 dBm of saturated output power with power...
DC - 14 GHz, 100 Watt Discrete Power GaN on SiC HEMT -- TGF2023-2-20 Qorvo's TGF2023-2-20 is a discrete 20 mm GaN on SiCHEMT which operates from DC to 14 GHz. The TGF2023-2-20 typically provides 50.5 dBm of saturated output power with power gain...
DC - 20 GHz 250 um Discrete GaAs pHEMT -- TGF2025 Qorvo's TGF2025 is a discrete 250 micron pHEMT which operates from DC to 20 GHz. The TGF2025 is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process...
DC - 20 GHz 400 um Discrete GaAs pHEMT -- TGF2040 Qorvo's TGF2040 is a discrete 400-Micron pHEMT which operates from DC to 20 GHz. The TGF2040 is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features...
DC - 20 GHz 600 um Discrete GaAs pHEMT -- TGF2060 Qorvo's TGF2060 is a discrete 600-Micron pHEMT which operates from DC to 20 GHz. The TGF2060 is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features...
DC - 20 GHz 800 um Discrete GaAs pHEMT -- TGF2080 Qorvo's TGF2080 is a discrete 800-Micron pHEMT which operates from DC to 20 GHz. The TGF2080 is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features...
DC - 20 GHz 1200 um Discrete GaAs pHEMT -- TGF2120 Qorvo's TGF2120 is a discrete 1200-Micron pHEMT which operates from DC to 20 GHz. The TGF2120 is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features...
DC - 20 GHz 1600 um Discrete GaAs pHEMT -- TGF2160 Qorvo's TGF2160 is a discrete 1600-Micron pHEMT which operates from DC to 20 GHz. The TGF2160 is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features...
DC - 3.5 GHz, 100 Watt, 28 V GaN RF Power Transistor -- TGF2929-FL Qorvo's TGF2929-FL is a 100 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 28V supply rail. The device is...
DC - 3.5 GHz, 100 Watt, 28 V GaN RF Power Transistor -- TGF2929-FS Qorvo's TGF2929-FS is a 100 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 28V supply rail. The device is...
DC - 3.5 GHz, 100 Watt, 28 Volt GaN RF Power Transistor -- TGF2929-HM Qorvo's TGF2929-HM is a 100 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 28V supply rail. The device is...
DC - 25 GHz, 2 Watt, 28 V GaN RF Transistor -- TGF2942 Qorvo's TGF2942 is a 2.4 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's proven...
DC - 14 GHz, 7 Watt Discrete Power GaN on SiC HEMT -- TGF2952 Qorvo's TGF2952 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-14 GHz. The TGF2952 typically provides 38.4 dBm of saturated output power with power gain of...
DC - 12 GHz, 12 Watt Discrete Power GaN on SiC HEMT -- TGF2953 Qorvo's TGF2953 is a discrete 2.52 mm GaN on SiC HEMT which operates from DC-12 GHz. The TGF2953 typically provides 41.2 dBm of saturated output power with power gain of...
DC - 12 GHz, 27 Watt Discrete Power GaN on SiC HEMT -- TGF2954 Qorvo's TGF2954 is a discrete 5.04 mm GaN on SiC HEMT which operates from DC-12 GHz. The TGF2954 typically provides 44.5 dBm of saturated output power with power gain of...
DC - 12 GHz, 40 Watt Discrete Power GaN on SiC HEMT -- TGF2955 Qorvo's TGF2955 is a discrete 7.56 mm GaN on SiC HEMT which operates from DC-12 GHz. The TGF2955 typically provides 46.4 dBm of saturated output power with power gain of...
DC - 12 GHz, 55 Watt Discrete Power GaN on SiC HEMT -- TGF2956 Qorvo's TGF2956 is a discrete 10.08 mm GaN on SiC HEMT which operates from DC-12 GHz. The TGF2956 typically provides 47.6 dBm of saturated output power with power gain of...
DC - 12 GHz, 70 Watt Discrete Power GaN on SiC HEMT -- TGF2957 Qorvo's TGF2957 is a discrete 12.6 mm GaN on SiC HEMT which operates from DC-12 GHz. The TGF2957 typically provides 48.6 dBm of saturated output power with power gain of...
0.03 - 3 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor -- TGF2965-SM Qorvo's TGF2965-SM is a 6W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 0.03 to 3.0 GHz. The integrated input matching network enables wideband gain and...
DC - 12 GHz, 5 Watt, 32 V GaN RF Transistor -- TGF2977-SM Qorvo's TGF2977-SM is a 5 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in...
DC - 12 GHz, 20 Watt, 32 V GaN RF Transistor -- TGF2978-SM Qorvo's TGF2978-SM is a 20 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in...
DC - 12 GHz, 25 Watt, 32 Volt GaN RF Transistor -- TGF2979-SM Qorvo's TGF2979-SM is a 25 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in...
0.03 - 3.0 GHz, 10 Watt, 32 Volt GaN RF Input-Matched Transistor -- TGF3015-SM Qorvo's TGF3015-SM is a 10W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 3.0 GHz. The integrated input matching network enables wideband gain...
4 - 6 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor -- TGF3020-SM Qorvo's TGF3020-SM is a 5W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 4.0 to 6.0 GHz. The integrated input matching network enables wideband gain and...
0.03 - 4.0 GHz, 30 Watt, 32 V GaN RF Transistor -- TGF3021-SM Qorvo's TGF3021-SM is a 30 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 4 GHz and a 32V supply rail. The device is in...
DC - 4 GHz, 5 Watt GaN Power Transistor -- TQP0102 Qorvo's TQP0102 is a wide band over-molded QFN discrete GaN power amplifier. The device is a single stage unmatched power amplifier transistor. The TQP0102 can be used in a Doherty...
DC - 4 GHz, 15 Watt GaN Power Transistor -- TQP0103 Qorvo's TQP0103 is a wide band over-molded QFN discrete GaN power amplifier. The device is a single stage unmatched power amplifier transistor. The TQP0103 can be used in a Doherty...
DC - 4 GHz, 30 Watt GaN Power Transistor -- TQP0104 Qorvo's TQP0104 is a wide band over-molded QFN discrete GaN power amplifier. The device is a single stage unmatched power amplifier transistor. The TQP0104 can be used in a Doherty...
30 - 1200 MHz, 25 Watt, 50 V GaN RF Input-Matched Transistor -- QPD1004 The Qorvo QPD1004 is a 25W (P3dB), 50 Ohm input matched discrete GaN on SiC HEMT which operates from 30 to 1200 MHz on a 50 V supply rail. The...
DC - 4 GHz, 15 Watt, 50 Volt GaN RF Transistor -- QPD1009 The Qorvo QPD1009 is a 15 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which...
7 Watt, 50 Volt, 0.03 - 1.2 GHz, GaN RF Input-Matched Transistor -- QPD1011 The Qorvo QPD1011 is a 7W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 1.2 GHz. The integrated input matching network enables wideband...
DC - 2.7 GHz, 150 Watt, 65 V GaN RF Transistor -- QPD1013 The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz. This is a single stage unmatched power amplifier transistor in...
500 Watt, 50 Volt, DC - 1.7 GHz, GaN RF Transistor -- QPD1016 The Qorvo QPD1016 is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply. The device is in an...
30 Watt, 50 Volt, 2.7 - 3.5 GHz, GaN RF Input-Matched Transistor -- QPD1020 The Qorvo QPD1020 is a 30 W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 2.7 to 3.5 GHz and 50 V supply. The integrated input...
DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor -- QPD1022 The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier...
1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor -- QPD1025 The Qorvo QPD1025 is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96 to 1.215 GHz. Input prematch within the package results in ease of external...
1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor -- QPD1025L The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96to 1.215 GHz. Input prematch within the package results in ease of external board...
1300 W, 65 V, 420 - 450 MHz GaN RF Input-Matched Transistor -- QPD1026L The Qorvo QPD1026L is a 1300 W (P3dB) discrete GaN on SiC HEMT which operates from 420 to 450 MHz. Input prematch within the package results in ease of external...
1500 Watt, 65 Volt, 1.2 - 1.4 GHz, GaN RF Input-Matched Transistor -- QPD1029L The Qorvo QPD1029L is a 1500 W (P3dB) discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz. Input prematch within the package results in ease of external...
400 Watt, 50 Volt, 2.7 - 2.9 GHz, GaN RF Power Transistor -- QPD1881L The Qorvo QPD1881L is a 400 W (P3dB) discrete GaN on SiC HEMT which operates from 2.7 to 2.9 GHz. Input prematch within the package results in ease of external...
DC - 4.0 GHz, 100 Watt Peak, 20 Watt Avg.Power, 50 Volt, GaN RF Power Transistor -- TGF2819-FL The Qorvo TGF2819-FL is a greater-than 100 W Peak (20 W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 4.0 GHz. The device is constructed with...
DC - 4.0 GHz, 100 Watt Peak, 20 Watt Avg. Power, 50 Volt, GaN RF Power Transistor -- TGF2819-FS The Qorvo TGF2819-FS is a greater-than 100 W Peak (20 W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 4.0 GHz. The device is constructed with...
DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor -- TGF2933 The Qorvo TGF2933 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's...
DC - 25 GHz, 14 Watt, 28 V GaN RF Transistor -- TGF2934 The Qorvo TGF2934 is a 14 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's...
DC - 25 GHz, 5 Watt, 28 V GaN RF Transistor -- TGF2935 The Qorvo TGF2935 is a 5 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's...
DC - 25 GHz, 10 Watt, 28 V GaN RF Transistor -- TGF2936 The Qorvo TGF2936 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's...
DC - 25 GHz, 4 Watt, 28 V GaN RF Transistor -- TGF2941 The Qorvo TGF2941 is a 4 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's...
5 - 300 MHz, 35 dB, 12 V, Si BJT Reverse MCM -- QPA5368 The QPA5368 is an Integrated Reverse Amplifier Module. The part employs Silicon Bipolar die, has high output capability and is operated from 5 MHz to 300 MHz. It provides excellent...
2.5 - 5.0 GHz, 8 Watt, 48 Volt GaN RF Transistor -- QPD0005 The QPD0005 is a single-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 2.5 to 5.0 GHz. It is a single-stage, unmatched transistor capable...
DC - 5 GHz, 20 Watt, 48 Volt, GaN RF Transistor -- QPD0007 The QPD0007 is a single-path discrete GaN on SiC HEMT in a DFN package which operates from DC to 5 GHz. It is a single-stage, unmatched transistor capable of delivering...
3.4 - 3.6 GHz, 15 Watt / 30 Watt, 48 Volt Asymmetric Doherty -- QPD0009 The QPD0009 is a dual-path discrete GaN on SiC HEMT in DFN package which operates from 3.4 to 3.6 GHz. The device is a single-stage power amplifier transistor for Doherty...
DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor -- QPD0020 The QPD0020 is a 35 Watt unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for...
DC - 4 GHz, 45 Watt, 48 Volt GaN RF Power Transistor -- QPD0030 The QPD0030 is a 45W (P3dB) unmatched discrete GaN on SiC HEMT which operates from DC to 4GHz on a 48V supply rail. It is ideally suited for basestation, radar...
DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor -- QPD0060 The QPD0060 is a wide band over-molded DFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor. The QPD0060 can be used in Doherty architecture for...
1.8 - 2.7 GHz, 2 x 15 Watt, 48 Volt Dual GaN RF Transistor -- QPD0210 The QPD0210 is a dual-path discrete GaN on SiC HEMT in a DFN package which operates from 1.8 to 2.7 GHz. In each path is a single-stage amplifier transistor. QPD0210...
2.5 - 2.7 GHz, 20 Watt / 40 Watt, 48 Volt Asymmetric Doherty -- QPD0211 The QPD0211 is a dual-path discrete GaN on SiC HEMT in DFN package which operates from 2.5 to 2.7 GHz. The device is a single-stage power amplifier transistor for Doherty...
3.4 - 3.8 GHz, 2 x 20 Watt, 48 Volt Dual GaN RF Transistor -- QPD0305 The QPD0305 is a dual-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 3.4 to 3.8 GHz. In each path is a single-stage amplifier...
4.4 - 5.0 GHz, 2 x 20 Watt, 48 Volt Dual GaN RF Transistor -- QPD0405 The QPD0405 is a dual-path discrete GaN on SiC HEMT in DFN package which operates from 4.4 to 5.0 GHz. In each path is a single-stage amplifier transistor QPD0405 can...
450 Watt, 50 Volt, 1.2 - 1.4 GHz GaN IMFET -- QPD1006 The QPD1006 is a 450 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN...
15 Watt, 50 Volt, 0.03 - 1.2 GHz, GaN RF Input-Matched Transistor -- QPD1014 The QPD1014 is a 15W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 1200MHz on a 50V supply rail. The integrated input matching network...
3.1 - 3.5 GHz, 450 Watt, 50 V GaN RF IMFET -- QPD1017 The QPD1017 is a 450 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 3.1 to 3.5 GHz and a 50V supply rail. The device is GaN...
500 Watt, 50 Volt, 2.7 - 3.1 GHz, GaN RF IMFET -- QPD1018 The QPD1018 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 2.7 to 3.1 GHz and a 50V supply rail. The device is GaN...
500 Watt, 50 Volt, 2.9 - 3.3 GHz, GaN RF IMFET -- QPD1019 The QPD1019 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 2.9 to 3.3 GHz and a 50V supply rail. The device is GaN...
300 Watt, 48 Volt, 1.8-2.2 GHz GaN RF Power Transistor -- QPD2194 The QPD2194 is a discrete GaN on SiC HEMT which operates from 1.8-2.2 GHz. The device is a single stage pre-matched power amplifier transistor. The QPD2194 can be used in...
400 Watt, 48 Volt, 1.8 - 2.2 GHz GaN RF Power Transistor -- QPD2195 The QPD2195 is a discrete GaN on SiC HEMT which operates from 1.8 - 2.2 GHz. The device is a single stage pre-matched power amplifier transistor. The QPD2195 can be...
3.4 - 3.8 GHz 48 Volt 150 / 300 Watt GaN RF Transistor -- QPD3640 The QPD3640 is a dual-path discrete GaN on SiC HEMT which operates on LTE downlink Band 42 (3.4 - 3.6 GHz) and Band 43 (3.6 - 3.8 GHz). The device...
30 Watt, 28 Volt, 9.2 - 9.7 GHz, GaN RF IMFET -- QPD9300 The QPD9300 is a 30 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 9.2 to 9.7 GHz and a 28 V supply rail. The device is...
45 - 1218 MHz, 36dB, 12V, GaAs pHEMT-MESFET, Edge QAM MCM -- RFAM3620 The RFAM3620 is an Integrated Edge QAM Amplifier Module. The part employs GaAs pHEMT die, GaAs MESFET die, a 20 dB range variable attenuator and a power enable feature, has...