Qorvo Datasheets for RF Transistors

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
RF Transistors: Learn more

Product Name	Notes
UF3C065030B3 UF3C065030K3S UF3C065030K4S UF3C065030T3S UF3C065040B3 UF3C065040K3S UF3C065040K4S UF3C065040T3S UF3C065080B3 UF3C065080B7S UF3C065080K3S UF3C065080K4S UF3C065080T3S UF3C120040K3S UF3C120040K4S UF3C120080B7S UF3C120080K3S UF3C120080K4S UF3C120150B7S UF3C120150K3S UF3C120150K4S UF3C120400K3S UF3C170400K3S UF3N170400B7S UF3SC065007K4S UF3SC065030B7S UF3SC065030D8S UF3SC065040B7S UF3SC065040D8S UF3SC120009K4S UF3SC120016K3S UF3SC120016K4S UF3SC120040B7S UJ3C065030B3 UJ3C065030K3S UJ3C065030T3S UJ3C065080B3 UJ3C065080K3S UJ3C065080T3S UJ3C120040K3S UJ3C120070K3S UJ3C120080K3S UJ3C120150K3S UJ3N065025K3S UJ3N065080K3S UJ3N120035K3S UJ3N120065K3S UJ3N120070K3S UJ4C075018K3S UJ4C075018K4S UJ4C075023K3S UJ4C075023K4S UJ4C075033K3S UJ4C075033K4S UJ4C075044K3S UJ4C075044K4S UJ4C075060K3S UJ4C075060K4S UJ4SC075006K4S UJ4SC075009K4S UJ4SC075011K4S
1.2 - 1.4 GHz, 500 Watt, 50 Volt, GaN RF IMFET -- QPD1003	Qorvo's QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN...
DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor -- QPD1008	Qorvo's QPD1008 is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz and a 50V supply rail. The device is in...
DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor -- QPD1008L	Qorvo's QPD1008L is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz and a 50V supply rail. The device is in...
DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor -- QPD1015	Qorvo's QPD1015 is a 65 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.7 GHz and a 50V supply rail. The device is in...
DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor -- QPD1015L	Qorvo's QPD1015L is a 65 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.7 GHz and a 50V supply rail. The device is in...
1.8 - 2.4 GHz, 220 Watt, 48 V GaN RF Power Transistor -- QPD1823	Qorvo's QPD1823 is a discrete GaN on SiC HEMT which operates from 1.8-2.4 GHz. The device is a single stage matched power amplifier transistor. The QPD1823 can be used in...
DC - 20 GHz, 180 um Discrete GaAs pHEMT Die -- QPD2018D	Qorvo's QPD2018D is a discrete 180-micron pHEMT which operates from DC to 20 GHz. The QPD2018D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features...
DC - 20 GHz, 250 um Discrete GaAs pHEMT Die -- QPD2025D	Qorvo's QPD2025D is a discrete 250-micron pHEMT which operates from DC to 20 GHz. The QPD2025D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features...
DC - 20 GHz, 400 um Discrete GaAs pHEMT Die -- QPD2040D	Qorvo's QPD2040D is a discrete 400-micron pHEMT which operates from DC to 20 GHz. The QPD2040D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features...
DC - 20 GHz, 600 um Discrete GaAs pHEMT Die -- QPD2060D	Qorvo's QPD2060D is a discrete 600-micron pHEMT which operates from DC to 20 GHz. The QPD2060D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features...
DC - 20 GHz, 800 um Discrete GaAs pHEMT Die -- QPD2080D	Qorvo's QPD2080D is a discrete 800-micron pHEMT which operates from DC to 20 GHz. The QPD2080D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features...
DC - 20 GHz, 1200 um Discrete GaAs pHEMT Die -- QPD2120D	Qorvo's QPD2120D is a discrete 1200-micron pHEMT which operates from DC to 20 GHz. The QPD2120D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features...
DC - 20 GHz, 1600 um Discrete GaAs pHEMT Die -- QPD2160D	Qorvo's QPD2160D is a discrete 1600-micron pHEMT which operates from DC to 20 GHz. The QPD2160D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features...
2.5 - 2.7 GHz, 200 Watt, 48 V GaN RF Power Transistor -- QPD2796	Qorvo's QPD2796 is a discrete GaN on SiC HEMT which operates from 2.5–2.7 GHz. The device is a single stage matched power amplifier transistor. The QPD2796 can be used in...
3.4 - 3.6 GHz, 180 Watt, 50 Volt GaN RF Power Transistor -- QPD3601	Qorvo's QPD3601 is a discrete GaN on SiC HEMT which operates from 3.4-3.6 GHz. The device is a single stage matched power amplifier transistor. The QPD3601 can be used in...
3.4 - 3.8 GHz, 85 Watt, 48 V GaN RF Power Transistor -- QPD3800	Qorvo's QPD3800 is a discrete GaN on SiC HEMT which operates from 3.4-3.8 GHz. The device is a single stage matched power amplifier transistor. The QPD38000 can be used in...
DC - 2 GHz, 285 Watt, 36 V GaN RF Power Transistor -- T1G2028536-FL	Qorvo's T1G2028536-FL is a 285 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2 GHz. The device is constructed with Qorvo's proven TQGaN25HV process, which features...
DC - 2 GHz, 285 Watt, 36 V GaN RF Power Transistor -- T1G2028536-FS	Qorvo's T1G2028536-FS is a 285 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2 GHz. The device is constructed with Qorvo's proven TQGaN25HV process, which features...
0.03 - 3.5 GHz, 5 Watt, 32 V GaN RF Input-Matched Transistor -- T1G3000532-SM	Qorvo's T1G3000532-SM is a 5 W (P3dB) wideband input matched discrete GaN on SiC HEMT which operates from 30MHz to 3.5GHz and a 32V supply rail. The device is in...
DC - 3.5 GHz, 45 Watt, 32 V GaN RF Power Transistor -- T1G4004532-FL	Qorvo's T1G4004532-FL is a 45 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 32V supply rail. The device is...
DC - 3.5 GHz, 45 Watt, 32 V GaN RF Power Transistor -- T1G4004532-FS	Qorvo's T1G4004532-FS is a 45 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 32V supply rail. The device is...
DC - 3.5 GHz, 120 Watt, 36 - 50 V GaN RF Power Transistor -- T1G4012036-FL	Qorvo's T1G4012036-FL is a 120 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 36-50V supply rail. The device is...
DC - 3.5 GHz, 120 Watt, 36 - 50 V GaN RF Power Transistor -- T1G4012036-FS	Qorvo's T1G4012036-FS is a 120 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 36-50V supply rail. The device is...
DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor -- T1G4020036-FL	Qorvo's T1G4020036-FL is a 2 x 200 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 50V supply rail. The...
DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor -- T1G4020036-FS	Qorvo's T1G4020036-FS is a 2 x 200 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 50V supply rail. The...
DC - 6 GHz, 10 Watt, 32 V GaN RF Power Transistor -- T1G6001032-SM	Qorvo's T1G6001032-SM is a 10 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC - 6GHz and a 32V supply rail. The device is in an...
DC - 3.5 GHz, 30 Watt, 32 V GaN RF Power Transistor -- T2G4003532-FL	Qorvo's T2G4003532-FL is a 30 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 32V supply rail. The device is...
DC - 3.5 GHz, 30 Watt, 32 V GaN RF Power Transistor -- T2G4003532-FS	Qorvo's T2G4003532-FS is a 30 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 32V supply rail. The device is...
DC - 3.5 GHz, 55 Watt, 28 V GaN RF Power Transistor -- T2G4005528-FS	Qorvo's T2G4005528-FS is a 55 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 28V supply rail. The device is...
DC - 6 GHz, 15 Watt, 28 V GaN RF Power Transistor -- T2G6001528-Q3	Qorvo's T2G6001528-Q3 is a 15 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in...
DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor -- T2G6003028-FL	Qorvo's T2G6003028-FL is a 30 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is...
DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor -- T2G6003028-FS	Qorvo's T2G6003028-FS is a 30 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is...
DC - 18 GHz, 6 Watt Discrete Power GaN on SiC HEMT -- TGF2023-2-01	Qorvo's TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC to 18 GHz. The device typically provides 38 dBm of saturated output power with power...
DC - 18 GHz, 12 Watt Discrete Power GaN on SiC HEMT -- TGF2023-2-02	Qorvo's TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC to 18 GHz. The TGF2023-2-02 typically provides 40.1 dBm of saturated output power with power...
DC - 18 GHz, 25 Watt Discrete Power GaN on SiC HEMT -- TGF2023-2-05	Qorvo's TGF2023-2-05 is a discrete 5.0 mm GaN on SiC HEMT which operates from DC to 18 GHz. The TGF2023-2-05 typically provides 43 dBm of saturated output power with power...
DC - 14 GHz, 50 Watt Discrete Power GaN on SiC HEMT -- TGF2023-2-10	Qorvo's TGF2023-2-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC to 14 GHz. The TGF2023-2-10 typically provides 47.4 dBm of saturated output power with power...
DC - 3.5 GHz, 100 Watt, 28 V GaN RF Power Transistor -- TGF2929-FL	Qorvo's TGF2929-FL is a 100 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 28V supply rail. The device is...
DC - 3.5 GHz, 100 Watt, 28 Volt GaN RF Power Transistor -- TGF2929-FS	Qorvo's TGF2929-FS is a 100 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 28V supply rail. The device is...
DC - 14 GHz, 7 Watt Discrete Power GaN on SiC HEMT -- TGF2952	Qorvo's TGF2952 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-14 GHz. The TGF2952 typically provides 38.4 dBm of saturated output power with power gain of...
DC - 12 GHz, 12 Watt Discrete Power GaN on SiC HEMT -- TGF2953	Qorvo's TGF2953 is a discrete 2.52 mm GaN on SiC HEMT which operates from DC-12 GHz. The TGF2953 typically provides 41.2 dBm of saturated output power with power gain of...
DC - 12 GHz, 27 Watt Discrete Power GaN on SiC HEMT -- TGF2954	Qorvo's TGF2954 is a discrete 5.04 mm GaN on SiC HEMT which operates from DC-12 GHz. The TGF2954 typically provides 44.5 dBm of saturated output power with power gain of...
DC - 12 GHz, 40 Watt Discrete Power GaN on SiC HEMT -- TGF2955	Qorvo's TGF2955 is a discrete 7.56 mm GaN on SiC HEMT which operates from DC-12 GHz. The TGF2955 typically provides 46.4 dBm of saturated output power with power gain of...
DC - 12 GHz, 55 Watt Discrete Power GaN on SiC HEMT -- TGF2956	Qorvo's TGF2956 is a discrete 10.08 mm GaN on SiC HEMT which operates from DC-12 GHz. The TGF2956 typically provides 47.6 dBm of saturated output power with power gain of...
DC - 12 GHz, 70 Watt Discrete Power GaN on SiC HEMT -- TGF2957	Qorvo's TGF2957 is a discrete 12.6 mm GaN on SiC HEMT which operates from DC-12 GHz. The TGF2957 typically provides 48.6 dBm of saturated output power with power gain of...
0.03 - 3 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor -- TGF2965-SM	Qorvo's TGF2965-SM is a 6W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 0.03 to 3.0 GHz. The integrated input matching network enables wideband gain and...
DC - 12 GHz, 5 Watt, 32 V GaN RF Transistor -- TGF2977-SM	Qorvo's TGF2977-SM is a 5 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in...
DC - 12 GHz, 20 Watt, 32 V GaN RF Transistor -- TGF2978-SM	Qorvo's TGF2978-SM is a 20 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in...
DC - 12 GHz, 25 Watt, 32 Volt GaN RF Transistor -- TGF2979-SM	Qorvo's TGF2979-SM is a 25 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in...
0.03 - 3.0 GHz, 10 Watt, 32 Volt GaN RF Input-Matched Transistor -- TGF3015-SM	Qorvo's TGF3015-SM is a 10W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 3.0 GHz. The integrated input matching network enables wideband gain...
4 - 6 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor -- TGF3020-SM	Qorvo's TGF3020-SM is a 5W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 4.0 to 6.0 GHz. The integrated input matching network enables wideband gain and...
0.03 - 4.0 GHz, 30 Watt, 32 V GaN RF Transistor -- TGF3021-SM	Qorvo's TGF3021-SM is a 30 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 4 GHz and a 32V supply rail. The device is in...
DC - 4 GHz, 30 Watt GaN Power Transistor -- TQP0104	Qorvo's TQP0104 is a wide band over-molded QFN discrete GaN power amplifier. The device is a single stage unmatched power amplifier transistor. The TQP0104 can be used in a Doherty...
DC - 4 GHz, 15 Watt, 50 Volt GaN RF Transistor -- QPD1009	The Qorvo QPD1009 is a 15 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which...
7 Watt, 50 Volt, 0.03 - 1.2 GHz, GaN RF Input-Matched Transistor -- QPD1011	The Qorvo QPD1011 is a 7W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 1.2 GHz. The integrated input matching network enables wideband...
30 Watt, 50 Volt, 2.7 - 3.5 GHz, GaN RF Input-Matched Transistor -- QPD1020	The Qorvo QPD1020 is a 30 W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 2.7 to 3.5 GHz and 50 V supply. The integrated input...
DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor -- QPD1022	The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier...
400 Watt, 50 Volt, 2.7 - 2.9 GHz, GaN RF Power Transistor -- QPD1881L	The Qorvo QPD1881L is a 400 W (P3dB) discrete GaN on SiC HEMT which operates from 2.7 to 2.9 GHz. Input prematch within the package results in ease of external...
DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor -- TGF2933	The Qorvo TGF2933 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's...
DC - 25 GHz, 14 Watt, 28 V GaN RF Transistor -- TGF2934	The Qorvo TGF2934 is a 14 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's...
DC - 25 GHz, 5 Watt, 28 V GaN RF Transistor -- TGF2935	The Qorvo TGF2935 is a 5 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's...
DC - 25 GHz, 10 Watt, 28 V GaN RF Transistor -- TGF2936	The Qorvo TGF2936 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's...
5 - 300 MHz, 35 dB, 12 V, Si BJT Reverse MCM -- QPA5368	The QPA5368 is an Integrated Reverse Amplifier Module. The part employs Silicon Bipolar die, has high output capability and is operated from 5 MHz to 300 MHz. It provides excellent...
2.5 - 5.0 GHz, 8 Watt, 48 Volt GaN RF Transistor -- QPD0005	The QPD0005 is a single-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 2.5 to 5.0 GHz. It is a single-stage, unmatched transistor capable...
DC - 5 GHz, 20 Watt, 48 Volt, GaN RF Transistor -- QPD0007	The QPD0007 is a single-path discrete GaN on SiC HEMT in a DFN package which operates from DC to 5 GHz. It is a single-stage, unmatched transistor capable of delivering...
DC - 6 GHz, 35 Watt, 48 Volt GaN RF Power Transistor -- QPD0020	The QPD0020 is a 35 Watt unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for...
DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor -- QPD0060	The QPD0060 is a wide band over-molded DFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor. The QPD0060 can be used in Doherty architecture for...
15 Watt, 50 Volt, 0.03 - 1.2 GHz, GaN RF Input-Matched Transistor -- QPD1014	The QPD1014 is a 15W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 1200MHz on a 50V supply rail. The integrated input matching network...
300 Watt, 48 Volt, 1.8-2.2 GHz GaN RF Power Transistor -- QPD2194	The QPD2194 is a discrete GaN on SiC HEMT which operates from 1.8-2.2 GHz. The device is a single stage pre-matched power amplifier transistor. The QPD2194 can be used in...
400 Watt, 48 Volt, 1.8 - 2.2 GHz GaN RF Power Transistor -- QPD2195	The QPD2195 is a discrete GaN on SiC HEMT which operates from 1.8 - 2.2 GHz. The device is a single stage pre-matched power amplifier transistor. The QPD2195 can be...
45 - 1218 MHz, 36dB, 12V, GaAs pHEMT-MESFET, Edge QAM MCM -- RFAM3620	The RFAM3620 is an Integrated Edge QAM Amplifier Module. The part employs GaAs pHEMT die, GaAs MESFET die, a 20 dB range variable attenuator and a power enable feature, has...

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