Qorvo Datasheets for RF Transistors

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
RF Transistors: Learn more

Product Name	Notes
QPD0030 QPD1003 QPD1006 QPD1010 QPD1013 QPD1016 QPD1016L QPD1025 QPD1025L QPD1026L QPD1028 QPD1028L QPD1029L QPD1035 QPD1035L QPD2018D QPD2025D QPD2040D QPD2060D QPD2080D QPD2120D QPD2160D T2G6000528-Q3 T2G6001528-SG TGF2819-FL UF3C065030B3 UF3C065030K3S UF3C065030K4S UF3C065030T3S UF3C065040B3 UF3C065040K3S UF3C065040K4S UF3C065040T3S UF3C065080B3 UF3C065080B7S UF3C065080K3S UF3C065080K4S UF3C065080T3S UF3C120040K3S UF3C120040K4S UF3C120080B7S UF3C120080K3S UF3C120080K4S UF3C120150B7S UF3C120150K3S UF3C120150K4S UF3C120400K3S UF3C170400K3S UF3N170400B7S UF3SC065007K4S UF3SC065030B7S UF3SC065030D8S UF3SC065040B7S UF3SC065040D8S UF3SC120009K4S UF3SC120016K3S UF3SC120016K4S UF3SC120040B7S UJ3C065030B3 UJ3C065030K3S UJ3C065030T3S UJ3C065080B3 UJ3C065080K3S UJ3C065080T3S UJ3C120040K3S UJ3C120070K3S UJ3C120080K3S UJ3C120150K3S UJ3N065025K3S UJ3N065080K3S UJ3N120035K3S UJ3N120065K3S UJ3N120070K3S UJ4C075018K3S UJ4C075018K4S UJ4C075023K3S UJ4C075023K4S UJ4C075033K3S UJ4C075033K4S UJ4C075044K3S UJ4C075044K4S UJ4C075060K3S UJ4C075060K4S UJ4SC075006K4S UJ4SC075009K4S UJ4SC075011K4S
DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor -- QPD1008	Qorvo's QPD1008 is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz and a 50V supply rail. The device is in...
DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor -- QPD1008L	Qorvo's QPD1008L is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz and a 50V supply rail. The device is in...
DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor -- QPD1015	Qorvo's QPD1015 is a 65 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.7 GHz and a 50V supply rail. The device is in...
DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor -- QPD1015L	Qorvo's QPD1015L is a 65 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.7 GHz and a 50V supply rail. The device is in...
DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor -- T1G4020036-FL	Qorvo's T1G4020036-FL is a 2 x 200 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 50V supply rail. The...
DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor -- T1G4020036-FS	Qorvo's T1G4020036-FS is a 2 x 200 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 50V supply rail. The...
DC - 3.5 GHz, 55 Watt, 28 V GaN RF Power Transistor -- T2G4005528-FS	Qorvo's T2G4005528-FS is a 55 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 28V supply rail. The device is...
DC - 6 GHz, 15 Watt, 28 V GaN RF Power Transistor -- T2G6001528-Q3	Qorvo's T2G6001528-Q3 is a 15 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in...
DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor -- T2G6003028-FL	Qorvo's T2G6003028-FL is a 30 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is...
DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor -- T2G6003028-FS	Qorvo's T2G6003028-FS is a 30 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is...
DC - 18 GHz, 6 Watt Discrete Power GaN on SiC HEMT -- TGF2023-2-01	Qorvo's TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC to 18 GHz. The device typically provides 38 dBm of saturated output power with power...
DC - 18 GHz, 12 Watt Discrete Power GaN on SiC HEMT -- TGF2023-2-02	Qorvo's TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC to 18 GHz. The TGF2023-2-02 typically provides 40.1 dBm of saturated output power with power...
DC - 18 GHz, 25 Watt Discrete Power GaN on SiC HEMT -- TGF2023-2-05	Qorvo's TGF2023-2-05 is a discrete 5.0 mm GaN on SiC HEMT which operates from DC to 18 GHz. The TGF2023-2-05 typically provides 43 dBm of saturated output power with power...
DC - 14 GHz, 50 Watt Discrete Power GaN on SiC HEMT -- TGF2023-2-10	Qorvo's TGF2023-2-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC to 14 GHz. The TGF2023-2-10 typically provides 47.4 dBm of saturated output power with power...
DC - 14 GHz, 100 Watt Discrete Power GaN on SiC HEMT -- TGF2023-2-20	Qorvo's TGF2023-2-20 is a discrete 20 mm GaN on SiCHEMT which operates from DC to 14 GHz. The TGF2023-2-20 typically provides 50.5 dBm of saturated output power with power gain...
DC - 3.5 GHz, 100 Watt, 28 V GaN RF Power Transistor -- TGF2929-FL	Qorvo's TGF2929-FL is a 100 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 28V supply rail. The device is...
DC - 12 GHz, 27 Watt Discrete Power GaN on SiC HEMT -- TGF2954	Qorvo's TGF2954 is a discrete 5.04 mm GaN on SiC HEMT which operates from DC-12 GHz. The TGF2954 typically provides 44.5 dBm of saturated output power with power gain of...
0.03 - 3 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor -- TGF2965-SM	Qorvo's TGF2965-SM is a 6W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 0.03 to 3.0 GHz. The integrated input matching network enables wideband gain and...
DC - 12 GHz, 5 Watt, 32 V GaN RF Transistor -- TGF2977-SM	Qorvo's TGF2977-SM is a 5 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in...
DC - 12 GHz, 20 Watt, 32 V GaN RF Transistor -- TGF2978-SM	Qorvo's TGF2978-SM is a 20 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in...
DC - 12 GHz, 25 Watt, 32 Volt GaN RF Transistor -- TGF2979-SM	Qorvo's TGF2979-SM is a 25 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in...
0.03 - 3.0 GHz, 10 Watt, 32 Volt GaN RF Input-Matched Transistor -- TGF3015-SM	Qorvo's TGF3015-SM is a 10W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 3.0 GHz. The integrated input matching network enables wideband gain...
4 - 6 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor -- TGF3020-SM	Qorvo's TGF3020-SM is a 5W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 4.0 to 6.0 GHz. The integrated input matching network enables wideband gain and...
0.03 - 4.0 GHz, 30 Watt, 32 V GaN RF Transistor -- TGF3021-SM	Qorvo's TGF3021-SM is a 30 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 4 GHz and a 32V supply rail. The device is in...
DC - 4 GHz, 15 Watt, 50 Volt GaN RF Transistor -- QPD1009	The Qorvo QPD1009 is a 15 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which...
DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor -- QPD1022	The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier...
DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor -- TGF2933	The Qorvo TGF2933 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's...
DC - 25 GHz, 10 Watt, 28 V GaN RF Transistor -- TGF2936	The Qorvo TGF2936 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's...
5 - 300 MHz, 35 dB, 12 V, Si BJT Reverse MCM -- QPA5368	The QPA5368 is an Integrated Reverse Amplifier Module. The part employs Silicon Bipolar die, has high output capability and is operated from 5 MHz to 300 MHz. It provides excellent...
DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor -- QPD0060	The QPD0060 is a wide band over-molded DFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor. The QPD0060 can be used in Doherty architecture for...
45 - 1218 MHz, 36dB, 12V, GaAs pHEMT-MESFET, Edge QAM MCM -- RFAM3620	The RFAM3620 is an Integrated Edge QAM Amplifier Module. The part employs GaAs pHEMT die, GaAs MESFET die, a 20 dB range variable attenuator and a power enable feature, has...

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