Qorvo's TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC to 18 GHz.
The device typically provides 38 dBm of saturated output power with power gain of 18 dB at 3 GHz. The maximum power added efficiency is 66% which makes the TGF2023-2-01 appropriate for high efficiency applications. The part is lead-free and RoHS compliant.
RF JFET Transistors DC-18GHZ 6W TQGaN25 PAE 71.6% Gain 18dB
DC-18GHZ,6W DISCRETE PWR GAN/SIC
| Qorvo | ODG (Origin Data Global) | DigiKey | |
|---|---|---|---|
| Product Category | RF Transistors | Transistors | Transistors |
| Product Number | TGF2023-2-01 | TGF2023-2-01 | 2312-TGF2023-2-01TR-ND |
| Product Name | DC - 18 GHz, 6 Watt Discrete Power GaN on SiC HEMT | Transistors | RF FETs, MOSFETs |
| Transistor Technology / Material | GaN on SiC |
