The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency.
| Qorvo | |
|---|---|
| Product Category | RF Transistors |
| Product Number | QPD2560L |
| Product Name | 300W, 1-1.5 GHz, GaN on SiC RF Transistor |
| Transistor Technology / Material | 300W, 1-1.5 GHz, GaN on SiC RF Transistor |
