Qorvo DC - 4 GHz, 15 Watt, 50 Volt GaN RF Transistor QPD1009

Description
The Qorvo QPD1009 is a 15 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. The device is housed in an industry-standard 3 x 3 mm surface mount QFN package. Lead-free and ROHS compliant. Evaluation boards are available upon request. For additional information on GaN thermal performance refer to the following application note and video.
  • DC - 4 GHz, 15 Watt, 50 Volt GaN RF Transistor - QPD1009 - Qorvo
    Qorvo
  • RF FETs, MOSFETs - 2312-QPD1009-ND - DigiKey
    DigiKey
Request a Quote Datasheet
Description
The Qorvo QPD1009 is a 15 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. The device is housed in an industry-standard 3 x 3 mm surface mount QFN package. Lead-free and ROHS compliant. Evaluation boards are available upon request. For additional information on GaN thermal performance refer to the following application note and video.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
DC - 4 GHz, 15 Watt, 50 Volt GaN RF Transistor - QPD1009 - Qorvo
Qorvo
Greensboro, NC, United States
DC - 4 GHz, 15 Watt, 50 Volt GaN RF Transistor
QPD1009
DC - 4 GHz, 15 Watt, 50 Volt GaN RF Transistor QPD1009
The Qorvo QPD1009 is a 15 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. The device is housed in an industry-standard 3 x 3 mm surface mount QFN package. Lead-free and ROHS compliant. Evaluation boards are available upon request. For additional information on GaN thermal performance refer to the following application note and video.

The Qorvo QPD1009 is a 15 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

The device is housed in an industry-standard 3 x 3 mm surface mount QFN package.

Lead-free and ROHS compliant.

Evaluation boards are available upon request.

For additional information on GaN thermal performance refer to the following application note and video.

Supplier's Site Datasheet
RF FETs, MOSFETs - 2312-QPD1009-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
2312-QPD1009-ND
RF FETs, MOSFETs 2312-QPD1009-ND
DC-4 GHZ, 15W, 50V GAN RF TR

DC-4 GHZ, 15W, 50V GAN RF TR

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
4GHz 15W 50V MOSFET Transistor
278-QPD1009
4GHz 15W 50V MOSFET Transistor 278-QPD1009
GaN FETs DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN Product overview: QPD1009 from Qorvo is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4GHz, 15W, 50V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4GHz, 15W, 50V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-QPD1009 can be used for catalog matching and distributor lookup.

GaN FETs DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN Product overview: QPD1009 from Qorvo is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4GHz, 15W, 50V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 4GHz, 15W, 50V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-QPD1009 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
RF JFET Transistors
QPD1009
RF JFET Transistors QPD1009
RF JFET Transistors DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN

RF JFET Transistors DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN

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Technical Specifications

  Qorvo DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number QPD1009 2312-QPD1009-ND 278-QPD1009 QPD1009
Product Name DC - 4 GHz, 15 Watt, 50 Volt GaN RF Transistor RF FETs, MOSFETs 4GHz 15W 50V MOSFET Transistor RF JFET Transistors
Transistor Technology / Material DC - 4 GHz, 15 Watt, 50 Volt GaN RF Transistor
Transistor Grade / Operating Range Military
Package Type QFN 16-VFQFN Exposed Pad Tray
Power Gain 24 dB
Operating Frequency 0.0 to 4000 MHz
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