Qorvo DC - 12 GHz, 27 Watt Discrete Power GaN on SiC HEMT TGF2954

Description
Qorvo's TGF2954 is a discrete 5.04 mm GaN on SiC HEMT which operates from DC-12 GHz. The TGF2954 typically provides 44.5 dBm of saturated output power with power gain of 19.5 dB at 3 GHz. The maximum power added efficiency is 71.5 % which makes the TGF2954 appropriate for high efficiency applications. Lead-free and RoHS compliant.
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Description
Qorvo's TGF2954 is a discrete 5.04 mm GaN on SiC HEMT which operates from DC-12 GHz. The TGF2954 typically provides 44.5 dBm of saturated output power with power gain of 19.5 dB at 3 GHz. The maximum power added efficiency is 71.5 % which makes the TGF2954 appropriate for high efficiency applications. Lead-free and RoHS compliant.
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Suppliers

Company
Product
Description
Supplier Links
DC - 12 GHz, 27 Watt Discrete Power GaN on SiC HEMT - TGF2954 - Qorvo
Greensboro, NC, United States
DC - 12 GHz, 27 Watt Discrete Power GaN on SiC HEMT
TGF2954
DC - 12 GHz, 27 Watt Discrete Power GaN on SiC HEMT TGF2954
Qorvo's TGF2954 is a discrete 5.04 mm GaN on SiC HEMT which operates from DC-12 GHz. The TGF2954 typically provides 44.5 dBm of saturated output power with power gain of 19.5 dB at 3 GHz. The maximum power added efficiency is 71.5 % which makes the TGF2954 appropriate for high efficiency applications. Lead-free and RoHS compliant.

Qorvo's TGF2954 is a discrete 5.04 mm GaN on SiC HEMT which operates from DC-12 GHz.

The TGF2954 typically provides 44.5 dBm of saturated output power with power gain of 19.5 dB at 3 GHz. The maximum power added efficiency is 71.5 % which makes the TGF2954 appropriate for high efficiency applications.

Lead-free and RoHS compliant.

Supplier's Site Datasheet
RF FETs, MOSFETs - 2312-TGF2954-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
2312-TGF2954-ND
RF FETs, MOSFETs 2312-TGF2954-ND
DC-12GHZ,27W DISCRETE PWR GAN/SI

DC-12GHZ,27W DISCRETE PWR GAN/SI

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Technical Specifications

  Qorvo DigiKey
Product Category RF Transistors Transistors
Product Number TGF2954 2312-TGF2954-ND
Product Name DC - 12 GHz, 27 Watt Discrete Power GaN on SiC HEMT RF FETs, MOSFETs
Transistor Technology / Material GaN on SiC
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