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Qorvo DC - 12 GHz, 25 Watt, 32 Volt GaN RF Transistor TGF2979-SM

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DC - 12 GHz, 25 Watt, 32 Volt GaN RF Transistor - TGF2979-SM - Qorvo
Greensboro, NC, United States
DC - 12 GHz, 25 Watt, 32 Volt GaN RF Transistor
TGF2979-SM
DC - 12 GHz, 25 Watt, 32 Volt GaN RF Transistor TGF2979-SM
Qorvo's TGF2979-SM is a 25 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in an industry standard 4 x 3 mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations. Lead-free and ROHS compliant. Evaluation boards are available upon request.

Qorvo's TGF2979-SM is a 25 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in an industry standard 4 x 3 mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.

Lead-free and ROHS compliant. Evaluation boards are available upon request.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
RF JFET Transistors
TGF2979-SM
RF JFET Transistors TGF2979-SM
RF JFET Transistors 8-12GHz 25W GaN PAE 50% Gain 11dB

RF JFET Transistors 8-12GHz 25W GaN PAE 50% Gain 11dB

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Technical Specifications

  Qorvo VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors
Product Number TGF2979-SM TGF2979-SM
Product Name DC - 12 GHz, 25 Watt, 32 Volt GaN RF Transistor RF JFET Transistors
Transistor Technology / Material DC - 12 GHz, 25 Watt, 32 Volt GaN RF Transistor
Transistor Grade / Operating Range Military
Package Type QFN
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