The QPD1003 is a 500 W GaN on SiC HEMT RF discrete transistor with internal 50 Ω matching, designed for pulsed and linear operation in military and civilian radar systems operating between 1.2 and 1.4 GHz. It is housed in an air cavity package measuring 17.40 × 24.0 × 4.31 mm and operates with a 50 V drain supply. At 1.3 GHz, it delivers 540 W peak output power with 19.9 dB linear gain and 66.7% power-added efficiency. The device supports a gate voltage range of -7 V to +2 V, and features a thermal resistance of 0.3 °C/W. It is RoHS compliant, ESD classified as Class 1B (HBM) and Class C3 (CDM), and rated for MSL3 moisture sensitivity. The part is not compatible with reflow soldering and requires manual soldering.
RF JFET Transistors 1.2-1.4GHz 500W 50V SSG 20dB GaN
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Transistors |
| Product Number | QPD1003 |
| Product Name | RF JFET Transistors |
| Transistor Type | JFET |
