Qorvo DC - 20 GHz, 1600 um Discrete GaAs pHEMT Die QPD2160D

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DC - 20 GHz, 1600 um Discrete GaAs pHEMT Die - QPD2160D - Qorvo
Greensboro, NC, United States
DC - 20 GHz, 1600 um Discrete GaAs pHEMT Die
QPD2160D
DC - 20 GHz, 1600 um Discrete GaAs pHEMT Die QPD2160D
Qorvo's QPD2160D is a discrete 1600-micron pHEMT which operates from DC to 20 GHz. The QPD2160D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2160D typically provides 32.5 dBm of output power at P1dB with gain of 10.4 dB and 63% power-added efficiency at 1 dB compression. This performance makes the QPD2160D appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection. Lead-free and RoHS compliant.

Qorvo's QPD2160D is a discrete 1600-micron pHEMT which operates from DC to 20 GHz. The QPD2160D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2160D typically provides 32.5 dBm of output power at P1dB with gain of 10.4 dB and 63% power-added efficiency at 1 dB compression. This performance makes the QPD2160D appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.
Lead-free and RoHS compliant.

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Technical Specifications

  Qorvo
Product Category RF Transistors
Product Number QPD2160D
Product Name DC - 20 GHz, 1600 um Discrete GaAs pHEMT Die
Transistor Type PHEMT
Transistor Technology / Material DC - 20 GHz, 1600 um Discrete GaAs pHEMT Die
Transistor Grade / Operating Range Military
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