Qorvo DC - 25 GHz, 10 Watt, 28 V GaN RF Transistor TGF2936

Description
The Qorvo TGF2936 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's proven QGaN15 process. The device can support pulsed, CW, and linear operations. Lead-free and ROHS compliant.
Request a Quote Datasheet
Description
The Qorvo TGF2936 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's proven QGaN15 process. The device can support pulsed, CW, and linear operations. Lead-free and ROHS compliant.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
DC - 25 GHz, 10 Watt, 28 V GaN RF Transistor - TGF2936 - Qorvo
Greensboro, NC, United States
DC - 25 GHz, 10 Watt, 28 V GaN RF Transistor
TGF2936
DC - 25 GHz, 10 Watt, 28 V GaN RF Transistor TGF2936
The Qorvo TGF2936 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's proven QGaN15 process. The device can support pulsed, CW, and linear operations. Lead-free and ROHS compliant.

The Qorvo TGF2936 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's proven QGaN15 process. The device can support pulsed, CW, and linear operations.

Lead-free and ROHS compliant.

Supplier's Site Datasheet

Technical Specifications

  Qorvo
Product Category RF Transistors
Product Number TGF2936
Product Name DC - 25 GHz, 10 Watt, 28 V GaN RF Transistor
Transistor Technology / Material GaN
Unlock Full Specs
to access all available technical data

Similar Products

DC - 12 GHz, 27 Watt Discrete Power GaN on SiC HEMT - TGF2954 - Qorvo
Specs
Transistor Technology / Material GaN on SiC
Transistor Grade / Operating Range Military
Package Type Die
View Details
2 suppliers
DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor - QPD1015 - Qorvo
Specs
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type NI-360
View Details
3 suppliers
Single FETs, MOSFETs - UF3SC120016K3S - ODG (Origin Data Global)
Specs
Polarity N-Channel; N-Channel
Transistor Technology / Material SiCFET (Cascode SiCJFET)
V(BR)DSS 1200 volts
View Details
3 suppliers