Qorvo Datasheets for Junction Field-Effect Transistors (JFET)
Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region.
Junction Field-Effect Transistors (JFET): Learn more
Product Name | Notes |
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Qorvo's QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN... | |
Qorvo's QPD1008 is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz and a 50V supply rail. The device is in... | |
Qorvo's QPD1008L is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz and a 50V supply rail. The device is in... | |
Qorvo's QPD1010 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which features... | |
Qorvo's QPD1015 is a 65 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.7 GHz and a 50V supply rail. The device is in... | |
Qorvo's QPD1015L is a 65 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.7 GHz and a 50V supply rail. The device is in... | |
Qorvo's T2G6000528-Q3 is a 10 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in... | |
Qorvo's T2G6001528-Q3 is a 15 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in... | |
Qorvo's T2G6003028-FL is a 30 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is... | |
Qorvo's T2G6003028-FS is a 30 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is... | |
Qorvo's TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC to 18 GHz. The TGF2023-2-02 typically provides 40.1 dBm of saturated output power with power... | |
Qorvo's TGF2023-2-05 is a discrete 5.0 mm GaN on SiC HEMT which operates from DC to 18 GHz. The TGF2023-2-05 typically provides 43 dBm of saturated output power with power... | |
Qorvo's TGF2023-2-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC to 14 GHz. The TGF2023-2-10 typically provides 47.4 dBm of saturated output power with power... | |
Qorvo's TGF2965-SM is a 6W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 0.03 to 3.0 GHz. The integrated input matching network enables wideband gain and... | |
Qorvo's TGF2977-SM is a 5 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in... | |
Qorvo's TGF2978-SM is a 20 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in... | |
Qorvo's TGF2979-SM is a 25 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in... | |
Qorvo's TGF3015-SM is a 10W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 3.0 GHz. The integrated input matching network enables wideband gain... | |
Qorvo's UF3N120007K4S is a 1200 V, 7.1 mohm high-performance Gen 3 normally-on SiC JFET transistor. This device exhibits ultra-low on resistance (RDS(on)) in a standard TO-247-4L package, making... | |
Qorvo's UF3N170400B7S is a 1700 V, 400 mohm high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction... | |
Qorvo's UG3SC120009K4S "Combo-FET" integrates both a 1200V SiC JFET and a Low Voltage Si MOSFET into a single TO-247-4L package. This innovative approach allows users to create circuitry that would... | |
Qorvo's UG4SC075005L8S "Combo-FET" integrates both a 750V SiC JFET and a Low Voltage Si MOSFET into a single TOLL package. This innovative approach allows users to create circuitry that would... | |
Qorvo's UG4SC075006K4S ""Combo-FET"" integrates both a 750V SiC JFET and a Low Voltage Si MOSFET into a single TO-247-4L package. This innovative approach allows users to create circuitry that would... | |
Qorvo's UG4SC075009K4S ""Combo-FET"" integrates both a 750V SiC JFET and a Low Voltage Si MOSFET into a single TO-247-4L package. This innovative approach allows users to create circuitry that would... | |
Qorvo's UG4SC075011K4S "Combo-FET" integrates both a 750V SiC JFET and a Low Voltage Si MOSFET into a single TO-247-4L package. This innovative approach allows users to create circuitry that would... | |
Qorvo's UJ3N065025K3S is a 650 V, 25 mohm high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction... | |
Qorvo's UJ3N065080K3S is a 650 V, 80 mohm high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction... | |
Qorvo's UJ3N120035K3S is a 1200 V, 35 mohm high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction... | |
Qorvo's UJ3N120065K3S is a 1200 V, 66 mohm high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction... | |
Qorvo's UJ3N120070K3S is a 1200 V, 70 mohm high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction... | |
Qorvo's UJ4N075004L8S is a 750 V, 4.3 mohm high-performance Gen 4 normally-on SiC JFET transistor. This device exhibits ultra-low on resistance (RDS(on)) in a compact TOLL package, making... | |
Qorvo's UJ4N075005K4S is a 750 V, 4.8 mohm high-performance Gen 4 normally-on SiC JFET transistor. This device exhibits ultra-low on resistance (RDS(on)) in a standard TO-247-4L package, making... | |
The Qorvo QPD1009 is a 15 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which... | |
The QPD0030 is a 45W (P3dB) unmatched discrete GaN on SiC HEMT which operates from DC to 5GHz on a 48V supply rail. It is ideally suited for basestation, radar... | |
The QPD1006 is a 450 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN... |