Qorvo Datasheets for Junction Field-Effect Transistors (JFET)

Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region.
Junction Field-Effect Transistors (JFET): Learn more

Product Name	Notes
QPD0005TR13 QPD0020TR7 QPD0210SR QPD0210TR13 QPD0305SR QPD0305TR13 QPD0405SR QPD0405TR13 QPD1000 QPD1004SR QPD9300SR T1G2028536-FL T1G2028536-FS T2G4003532-FL T2G4003532-FS T2G6000528-Q3 28V TGF2025 TGF2929-HM TGF2953 TGF2957 UF3N170400B7S UF3SC120016K3S UF3SC120016K4S UJ3C120070K3S UJ3C120080K3S UJ3N065025K3S UJ3N065080K3S UJ3N120035K3S UJ3N120065K3S UJ3N120070K3S UJ4SC075011B7S UJ4SC075018L8S
1.2 - 1.4 GHz, 500 Watt, 50 Volt, GaN RF IMFET -- QPD1003	Qorvo's QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN...
DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor -- QPD1008	Qorvo's QPD1008 is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz and a 50V supply rail. The device is in...
DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor -- QPD1008L	Qorvo's QPD1008L is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz and a 50V supply rail. The device is in...
DC - 4 GHz, 10 Watt, 50 Volt GaN RF Transistor -- QPD1010	Qorvo's QPD1010 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which features...
DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor -- QPD1015	Qorvo's QPD1015 is a 65 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.7 GHz and a 50V supply rail. The device is in...
DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor -- QPD1015L	Qorvo's QPD1015L is a 65 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.7 GHz and a 50V supply rail. The device is in...
DC - 6 GHz, 10 Watt, 28 V GaN RF Power Transistor -- T2G6000528-Q3	Qorvo's T2G6000528-Q3 is a 10 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in...
DC - 6 GHz, 15 Watt, 28 V GaN RF Power Transistor -- T2G6001528-Q3	Qorvo's T2G6001528-Q3 is a 15 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in...
DC - 6 GHz, 15 Watt, 28 Volt GaN RF Power Transistor -- T2G6001528-SG	Qorvo's T2G6001528-SG is a 15 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in...
DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor -- T2G6003028-FL	Qorvo's T2G6003028-FL is a 30 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is...
DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor -- T2G6003028-FS	Qorvo's T2G6003028-FS is a 30 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is...
DC - 18 GHz, 12 Watt Discrete Power GaN on SiC HEMT -- TGF2023-2-02	Qorvo's TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC to 18 GHz. The TGF2023-2-02 typically provides 40.1 dBm of saturated output power with power...
DC - 18 GHz, 25 Watt Discrete Power GaN on SiC HEMT -- TGF2023-2-05	Qorvo's TGF2023-2-05 is a discrete 5.0 mm GaN on SiC HEMT which operates from DC to 18 GHz. The TGF2023-2-05 typically provides 43 dBm of saturated output power with power...
DC - 14 GHz, 50 Watt Discrete Power GaN on SiC HEMT -- TGF2023-2-10	Qorvo's TGF2023-2-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC to 14 GHz. The TGF2023-2-10 typically provides 47.4 dBm of saturated output power with power...
0.03 - 3 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor -- TGF2965-SM	Qorvo's TGF2965-SM is a 6W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 0.03 to 3.0 GHz. The integrated input matching network enables wideband gain and...
DC - 12 GHz, 5 Watt, 32 V GaN RF Transistor -- TGF2977-SM	Qorvo's TGF2977-SM is a 5 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in...
DC - 12 GHz, 20 Watt, 32 V GaN RF Transistor -- TGF2978-SM	Qorvo's TGF2978-SM is a 20 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in...
DC - 12 GHz, 25 Watt, 32 Volt GaN RF Transistor -- TGF2979-SM	Qorvo's TGF2979-SM is a 25 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in...
0.03 - 3.0 GHz, 10 Watt, 32 Volt GaN RF Input-Matched Transistor -- TGF3015-SM	Qorvo's TGF3015-SM is a 10W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 3.0 GHz. The integrated input matching network enables wideband gain...
DC - 4 GHz, 15 Watt, 50 Volt GaN RF Transistor -- QPD1009	The Qorvo QPD1009 is a 15 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which...
DC - 5 GHz, 45 Watt, 48 Volt GaN RF Power Transistor -- QPD0030	The QPD0030 is a 45W (P3dB) unmatched discrete GaN on SiC HEMT which operates from DC to 5GHz on a 48V supply rail. It is ideally suited for basestation, radar...
450 Watt, 50 Volt, 1.2 - 1.4 GHz GaN IMFET -- QPD1006	The QPD1006 is a 450 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN...

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